Nanostructured hematite thin films for photoelectrochemical water splitting

Nanostructured hematite thin films prepared by dip coating technique were investigated for their photoelectrochemical activity for generation of hydrogen from water splitting. Structural, morphological and optical analyses of the doped/undoped films were performed by X-ray diffraction, high resoluti...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2018-04, Vol.535, p.67-71
Hauptverfasser: Maabong, Kelebogile, Machatine, Augusto G.J., Mwankemwa, Benard S., Braun, Artur, Bora, Debajeet K., Toth, Rita, Diale, Mmantsae
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container_end_page 71
container_issue
container_start_page 67
container_title Physica. B, Condensed matter
container_volume 535
creator Maabong, Kelebogile
Machatine, Augusto G.J.
Mwankemwa, Benard S.
Braun, Artur
Bora, Debajeet K.
Toth, Rita
Diale, Mmantsae
description Nanostructured hematite thin films prepared by dip coating technique were investigated for their photoelectrochemical activity for generation of hydrogen from water splitting. Structural, morphological and optical analyses of the doped/undoped films were performed by X-ray diffraction, high resolution field emission-scanning electron microscopy, UV–vis spectrophotometry and Raman spectroscopy. The photoelectrochemical measurements of the films showed enhanced photoresponse and cathodic shift of the onset potential upon Ti doping indicating improved transfer of photoholes at the semiconductor-electrolyte interface. Films doped with 1at% Ti produced 0.72mA/cm2 at 1.23V vs RHE which is 2 times higher than current density for the pure film (0.30mA/cm2, at 1.23V vs RHE). Gas chromatography analysis of the films also showed enhanced hydrogen evolution at 1at% Ti with respect to pure film.
doi_str_mv 10.1016/j.physb.2017.06.054
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Structural, morphological and optical analyses of the doped/undoped films were performed by X-ray diffraction, high resolution field emission-scanning electron microscopy, UV–vis spectrophotometry and Raman spectroscopy. The photoelectrochemical measurements of the films showed enhanced photoresponse and cathodic shift of the onset potential upon Ti doping indicating improved transfer of photoholes at the semiconductor-electrolyte interface. Films doped with 1at% Ti produced 0.72mA/cm2 at 1.23V vs RHE which is 2 times higher than current density for the pure film (0.30mA/cm2, at 1.23V vs RHE). Gas chromatography analysis of the films also showed enhanced hydrogen evolution at 1at% Ti with respect to pure film.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2017.06.054</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record>
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source ScienceDirect Journals (5 years ago - present)
subjects Diffraction
Dip coating
Field emission microscopy
Gas chromatography
Hematite
Hydrogen evolution
Immersion coating
Microscopy
Nanostructure
Nanostructured materials
Photoelectrochemical
Scanning electron microscopy
Spectrophotometry
Thin films
Ti-doping
Water
Water splitting
X-ray diffraction
title Nanostructured hematite thin films for photoelectrochemical water splitting
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