Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system
A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were per...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2018-07, Vol.124 (7), p.1-12, Article 512 |
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| creator | Jasik, Agata Sankowska, Iwona Wawro, Andrzej Ratajczak, Jacek Jakieła, Rafał Pierścińska, Dorota Smoczyński, Dariusz Czuba, Krzysztof Regiński, Kazimierz |
| description | A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As
2
dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger’s circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger’s vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM
2
θ
/
ω
= 42 arcsec, FWHM
RC
= 125 arcsec. The EPD = 4 × 10
6
cm
− 2
was estimated after etching in FeCl
3
:HCl solution. The Δ
q
z
/Δ
q
x
ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were:
p
= 4.0 × 10
16
cm
−3
(2.0 × 10
16
cm
−3
) and
µ
= 599 cm
2
/V s (3420 cm
2
/V s) at 300 K (77 K). |
| doi_str_mv | 10.1007/s00339-018-1931-8 |
| format | Article |
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2
dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger’s circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger’s vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM
2
θ
/
ω
= 42 arcsec, FWHM
RC
= 125 arcsec. The EPD = 4 × 10
6
cm
− 2
was estimated after etching in FeCl
3
:HCl solution. The Δ
q
z
/Δ
q
x
ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were:
p
= 4.0 × 10
16
cm
−3
(2.0 × 10
16
cm
−3
) and
µ
= 599 cm
2
/V s (3420 cm
2
/V s) at 300 K (77 K).</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-018-1931-8</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Applied physics ; Arrays ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Crystal lattices ; Dimers ; Dislocation density ; Edge dislocations ; Gallium antimonides ; Iron chlorides ; Lattice sites ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Parameters ; Physics ; Physics and Astronomy ; Processes ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2018-07, Vol.124 (7), p.1-12, Article 512</ispartof><rights>The Author(s) 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-8b88b191001e690ada97857c3465ea375cefbbf9144b38caeeb821a06173d2c53</citedby><cites>FETCH-LOGICAL-c359t-8b88b191001e690ada97857c3465ea375cefbbf9144b38caeeb821a06173d2c53</cites><orcidid>0000-0003-4051-499X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-018-1931-8$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-018-1931-8$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Jasik, Agata</creatorcontrib><creatorcontrib>Sankowska, Iwona</creatorcontrib><creatorcontrib>Wawro, Andrzej</creatorcontrib><creatorcontrib>Ratajczak, Jacek</creatorcontrib><creatorcontrib>Jakieła, Rafał</creatorcontrib><creatorcontrib>Pierścińska, Dorota</creatorcontrib><creatorcontrib>Smoczyński, Dariusz</creatorcontrib><creatorcontrib>Czuba, Krzysztof</creatorcontrib><creatorcontrib>Regiński, Kazimierz</creatorcontrib><title>Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As
2
dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger’s circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger’s vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM
2
θ
/
ω
= 42 arcsec, FWHM
RC
= 125 arcsec. The EPD = 4 × 10
6
cm
− 2
was estimated after etching in FeCl
3
:HCl solution. The Δ
q
z
/Δ
q
x
ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were:
p
= 4.0 × 10
16
cm
−3
(2.0 × 10
16
cm
−3
) and
µ
= 599 cm
2
/V s (3420 cm
2
/V s) at 300 K (77 K).</description><subject>Applied physics</subject><subject>Arrays</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Crystal lattices</subject><subject>Dimers</subject><subject>Dislocation density</subject><subject>Edge dislocations</subject><subject>Gallium antimonides</subject><subject>Iron chlorides</subject><subject>Lattice sites</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Parameters</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp1kEFLAzEQhYMoWKs_wFvAc2yyye4mx1K0FQoe1HNI0kmb0t2tybbQf2-WFTw5l4Hhe294D6FHRp8ZpfUsUcq5IpRJwhRnRF6hCRO8ILTi9BpNqBI1kVxVt-gupT3NI4piguyia44RdtCmcAYc2jOkPmxNH7oWdx73u-HYQ_TGBXPATUg-9NjEaC7Yd7EZydDipfmws6WZJ5xvEAc4XVIPzT268eaQ4OF3T9HX68vnYkXW78u3xXxNHC9VT6SV0jKV0zCoFDUbo2pZ1o6LqgTD69KBt9YrJoTl0hkAKwtmaMVqvilcyafoafQ9xu77lGPofXeKbX6pi0zJsioFzxQbKRe7lCJ4fYyhMfGiGdVDlXqsUucq9VCllllTjJqU2XYL8c_5f9EPEJ93aA</recordid><startdate>20180701</startdate><enddate>20180701</enddate><creator>Jasik, Agata</creator><creator>Sankowska, Iwona</creator><creator>Wawro, Andrzej</creator><creator>Ratajczak, Jacek</creator><creator>Jakieła, Rafał</creator><creator>Pierścińska, Dorota</creator><creator>Smoczyński, Dariusz</creator><creator>Czuba, Krzysztof</creator><creator>Regiński, Kazimierz</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-4051-499X</orcidid></search><sort><creationdate>20180701</creationdate><title>Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system</title><author>Jasik, Agata ; Sankowska, Iwona ; Wawro, Andrzej ; Ratajczak, Jacek ; Jakieła, Rafał ; Pierścińska, Dorota ; Smoczyński, Dariusz ; Czuba, Krzysztof ; Regiński, Kazimierz</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-8b88b191001e690ada97857c3465ea375cefbbf9144b38caeeb821a06173d2c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Arrays</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Crystal lattices</topic><topic>Dimers</topic><topic>Dislocation density</topic><topic>Edge dislocations</topic><topic>Gallium antimonides</topic><topic>Iron chlorides</topic><topic>Lattice sites</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Parameters</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jasik, Agata</creatorcontrib><creatorcontrib>Sankowska, Iwona</creatorcontrib><creatorcontrib>Wawro, Andrzej</creatorcontrib><creatorcontrib>Ratajczak, Jacek</creatorcontrib><creatorcontrib>Jakieła, Rafał</creatorcontrib><creatorcontrib>Pierścińska, Dorota</creatorcontrib><creatorcontrib>Smoczyński, Dariusz</creatorcontrib><creatorcontrib>Czuba, Krzysztof</creatorcontrib><creatorcontrib>Regiński, Kazimierz</creatorcontrib><collection>SpringerOpen</collection><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jasik, Agata</au><au>Sankowska, Iwona</au><au>Wawro, Andrzej</au><au>Ratajczak, Jacek</au><au>Jakieła, Rafał</au><au>Pierścińska, Dorota</au><au>Smoczyński, Dariusz</au><au>Czuba, Krzysztof</au><au>Regiński, Kazimierz</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2018-07-01</date><risdate>2018</risdate><volume>124</volume><issue>7</issue><spage>1</spage><epage>12</epage><pages>1-12</pages><artnum>512</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As
2
dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger’s circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger’s vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM
2
θ
/
ω
= 42 arcsec, FWHM
RC
= 125 arcsec. The EPD = 4 × 10
6
cm
− 2
was estimated after etching in FeCl
3
:HCl solution. The Δ
q
z
/Δ
q
x
ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were:
p
= 4.0 × 10
16
cm
−3
(2.0 × 10
16
cm
−3
) and
µ
= 599 cm
2
/V s (3420 cm
2
/V s) at 300 K (77 K).</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-018-1931-8</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0003-4051-499X</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics. A, Materials science & processing, 2018-07, Vol.124 (7), p.1-12, Article 512 |
| issn | 0947-8396 1432-0630 |
| language | eng |
| recordid | cdi_proquest_journals_2061856543 |
| source | SpringerLink (full text journal articles and electronic books) |
| subjects | Applied physics Arrays Characterization and Evaluation of Materials Condensed Matter Physics Crystal lattices Dimers Dislocation density Edge dislocations Gallium antimonides Iron chlorides Lattice sites Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Parameters Physics Physics and Astronomy Processes Surfaces and Interfaces Thin Films |
| title | Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system |
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