Structural, Electrical, and Ferroelectric Properties of Nb-Doped Na0.5Bi4.5Ti4O15 Thin Films

Structural, Electrical, and Ferroelectric Properties of Nb-Doped Na0.5Bi4.5Ti4O15 Thin Films

Ferroelectric Na0.5Bi4.5Ti4O15 (NaBTi) and donor Nb‐doped Na0.5Bi4.5Ti3.94Nb0.06O15 (NaBTiNb) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a chemical solution deposition method. The doping with Nb5+‐ions leads to tremendous improvements in the ferroelectric properties of the...

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Veröffentlicht in:Journal of the American Ceramic Society 2015-10, Vol.98 (10), p.3153-3158
Hauptverfasser: Raghavan, Chinnambedu Murugesan, Kim, Jin Won, Kim, Sang Su
Format: Artikel
Sprache:eng
Schlagworte:
Coercivity
Electric fields
Electricity
Endurance
Ferroelectric materials
Ferroelectricity
Leakage current
Niobium
Organic chemistry
Polarization
Silicon dioxide
Silicon substrates
Thin films
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creator Raghavan, Chinnambedu Murugesan
Kim, Jin Won
Kim, Sang Su
description Ferroelectric Na0.5Bi4.5Ti4O15 (NaBTi) and donor Nb‐doped Na0.5Bi4.5Ti3.94Nb0.06O15 (NaBTiNb) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a chemical solution deposition method. The doping with Nb5+‐ions leads to tremendous improvements in the ferroelectric properties of the NaBTiNb thin film. Room‐temperature ferroelectricity with a large remnant polarization (2Pr) of 64.1 μC/cm2 and a low coercive field (2Ec) of 165 kV/cm at an applied electric field of 475 kV/cm was observed for the NaBTiNb thin film. The polarization fatigue study revealed that the NaBTiNb thin film exhibited good fatigue endurance compared with the NaBTi thin film. Furthermore, the NaBTiNb thin film showed a low leakage current density, which was 1.48 × 10−6 A/cm2 at an applied electric field of 100 kV/cm.
doi_str_mv 10.1111/jace.13744
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The doping with Nb5+‐ions leads to tremendous improvements in the ferroelectric properties of the NaBTiNb thin film. Room‐temperature ferroelectricity with a large remnant polarization (2Pr) of 64.1 μC/cm2 and a low coercive field (2Ec) of 165 kV/cm at an applied electric field of 475 kV/cm was observed for the NaBTiNb thin film. The polarization fatigue study revealed that the NaBTiNb thin film exhibited good fatigue endurance compared with the NaBTi thin film. 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subjects Coercivity
Electric fields
Electricity
Endurance
Ferroelectric materials
Ferroelectricity
Leakage current
Niobium
Organic chemistry
Polarization
Silicon dioxide
Silicon substrates
Thin films
title Structural, Electrical, and Ferroelectric Properties of Nb-Doped Na0.5Bi4.5Ti4O15 Thin Films
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