Experimental evidence of the thickness- and electric-field-dependent topological phase transitions in topological crystalline insulator SnTe(111) thin films

Using in situ angle-resolved photoemission spectroscopy, we systematically studied molecular-beam-epitaxy-grown topological crystalline insulator SnTe(111) thin films with varied thicknesses and substrate conditions. An oscillation in the band gap size with an increase in thickness was observed to d...

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Veröffentlicht in:Nano research 2018-11, Vol.11 (11), p.6045-6050
Hauptverfasser: Gong, Yan, Zhu, Kejing, Li, Zhe, Zang, Yunyi, Feng, Xiao, Zhang, Ding, Song, Canli, Wang, Lili, Li, Wei, Chen, Xi, Ma, Xu-Cun, Xue, Qi-Kun, Xu, Yong, He, Ke
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Sprache:eng
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