Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors

Metal/semiconductor contact is a significant constraint in short‐channel field effect transistors (FETs) comprising black phosphorus (BP) and other 2D semiconductors. Due to the pinning effect at metal/2D semiconductor interface, the Schottky barrier usually does not follow the Schottky–Mott rule, r...

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Veröffentlicht in:	Advanced functional materials 2018-06, Vol.28 (26), p.n/a
Hauptverfasser:	Jiang, Bei, Zou, Xuming, Su, Jie, Liang, Jinghua, Wang, Jingli, Liu, Huijun, Feng, Liping, Jiang, Changzhong, Wang, Feng, He, Jun, Liao, Lei
Format:	Artikel
Sprache:	eng
Schlagworte:	Barriers black phosphorus Electric contacts Electrical measurement energy band calculation Field effect transistors Materials science Phosphorus pinning effect Schottky barrier Semiconductor devices thickness‐dependent Transistors
Online-Zugang:	Volltext
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