Low temperature diamond growth arising from ultrafast pulsed-laser pretreatment

At temperatures significantly lower than normal growth temperatures using the hot filament chemical vapor diamond deposition approach, we have observed growth of high quality diamond films resulting from the application of in situ ultrafast pulsed-laser irradiation as a pretreatment step, on a conve...

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Veröffentlicht in:	Carbon (New York) 2018-05, Vol.131, p.120-126
Hauptverfasser:	Krzyżanowska, Halina, Paxton, William F., Yilmaz, Mesut, Mayo, Anthony, Kozub, John, Howell, Mick, Gregory, Justin, Butler, James E., Kang, Weng Poo, Mu, Richard, Davidson, Jimmy L., Tolk, Norman H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Diamond films Diamonds Irradiation Lasers Low temperature Organic chemistry Pretreatment Scanning electron microscopy Semiconductors Silicon substrates
Online-Zugang:	Volltext
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