Effect of Radiation-Induced Defects Produced by Low-Energy Protons in a Heavily Doped Layer on the Characteristics of n+‒p‒p+ Si Structures

The irradiation of semiconductor structures with low-energy protons is used to control changes in their properties at a depth ranging from 0.1 to 1000 μm. Devices manufactured from such structures have high sensitivities to changes in the state of the surface region. The paper is dedicated to studyi...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2018-05, Vol.12 (3), p.499-503
Hauptverfasser:	Agafonov, Y. A., Bogatov, N. M., Grigorian, L. R., Zinenko, V. I., Kovalenko, A. I., Kovalenko, M. S., Kolokolov, F. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Defects Diffusion layers Diffusion rate Divacancies Materials Science Optical properties Radiation effects Surfaces and Interfaces Thin Films
Online-Zugang:	Volltext
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