Anomalous Current–Voltage Behavior in Al/TiO2/n‐Si Structures

The current–voltage (J–V) curves of Al/TiO2/n‐Si structures present an anomalous behavior where the current becomes constant for a reverse bias higher than ≈0.65 V. Here we analyze devices fabricated by spin‐coating of an organometallic precursor and subsequent annealing in an O2 atmosphere. The det...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2018-06, Vol.12 (6), p.n/a
Hauptverfasser:	Razera, Ricardo A. Z., Boudinov, Henri I., Rodrigues, Frâncio S. B., Ferreira, Rodrigo Z., Feil, Adriano F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum current saturation Electric potential Saturation semiconductor physics Silicon space‐charge‐limited current TiO2 Titanium dioxide Voltage drop
Online-Zugang:	Volltext
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