Laser induced mixing in multilayered Ti/Ta thin film structures
The possibility of interlayer mixing in a Ti/Ta multilayer system, induced by laser irradiation, was the main purpose of these experiments. Ti/Ta multilayer system, consisting of ten alternating Ti and Ta thin films and covered by slightly thicker Ti layer, was deposited on Si (100) wafers to a tota...
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| Veröffentlicht in: | Optical and quantum electronics 2018-06, Vol.50 (6), p.1-10, Article 257 |
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| creator | Obradović, Marko Kovač, Janez Petrović, Suzana Lazović, Vladimir Salatić, Branislav Ciganović, Jovan Pjević, Dejan Milosavljević, Momir Peruško, Davor |
| description | The possibility of interlayer mixing in a Ti/Ta multilayer system, induced by laser irradiation, was the main purpose of these experiments. Ti/Ta multilayer system, consisting of ten alternating Ti and Ta thin films and covered by slightly thicker Ti layer, was deposited on Si (100) wafers to a total thickness of 205 nm. Laser irradiation was performed in air by picoseconds Nd:YAG laser pulses in defocused regime with fluences of 0.057 and 0.11 J cm
−2
. Laser beam was scanned over the 5 × 5 mm surface area with different steps along y-axes. Structural and compositional characterisation was done by auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. Laser processing at lower fluence caused only oxidation of the top Ti layer, despite of the number of applied laser pulses. Interlayer mixing was not observed. Application of laser pulses at fluence of 0.11 J cm
−2
caused partial and/or complete ablation of deposited layers. In partially ablated regions considerable mixing between Ti and Ta films was registered. |
| doi_str_mv | 10.1007/s11082-018-1525-x |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2052868565</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2052868565</sourcerecordid><originalsourceid>FETCH-LOGICAL-c311t-90bdeafe95740f70734553fb37e6022753d7bb0a44a49027ed04a69a50bbdc593</originalsourceid><addsrcrecordid>eNp1kEtLw0AUhQdRsFZ_gLuA67H3ziOTWYkUX1BwU8HdMEkmdUqS1pkE2n_vlAiuXF3O4Zxz4SPkFuEeAdQiIkLBKGBBUTJJD2dkhlIxWqD6PCcz4JDTQqO-JFcxbgEgFxJm5GFlowuZ7-uxcnXW-YPvN0lm3dgOvrVHF5K99ou1zYav5De-7bI4hLEaxuDiNblobBvdze-dk4_np_Xyla7eX96WjytaccSBaihrZxunpRLQKFBcSMmbkiuXA2NK8lqVJVghrNDAlKtB2FxbCWVZV1LzObmbdvdh9z26OJjtbgx9emkYSFbkhcxlSuGUqsIuxuAasw--s-FoEMyJk5k4mcTJnDiZQ-qwqRNTtt-48Lf8f-kHgSBqlQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2052868565</pqid></control><display><type>article</type><title>Laser induced mixing in multilayered Ti/Ta thin film structures</title><source>SpringerLink Journals - AutoHoldings</source><creator>Obradović, Marko ; Kovač, Janez ; Petrović, Suzana ; Lazović, Vladimir ; Salatić, Branislav ; Ciganović, Jovan ; Pjević, Dejan ; Milosavljević, Momir ; Peruško, Davor</creator><creatorcontrib>Obradović, Marko ; Kovač, Janez ; Petrović, Suzana ; Lazović, Vladimir ; Salatić, Branislav ; Ciganović, Jovan ; Pjević, Dejan ; Milosavljević, Momir ; Peruško, Davor</creatorcontrib><description>The possibility of interlayer mixing in a Ti/Ta multilayer system, induced by laser irradiation, was the main purpose of these experiments. Ti/Ta multilayer system, consisting of ten alternating Ti and Ta thin films and covered by slightly thicker Ti layer, was deposited on Si (100) wafers to a total thickness of 205 nm. Laser irradiation was performed in air by picoseconds Nd:YAG laser pulses in defocused regime with fluences of 0.057 and 0.11 J cm
−2
. Laser beam was scanned over the 5 × 5 mm surface area with different steps along y-axes. Structural and compositional characterisation was done by auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. Laser processing at lower fluence caused only oxidation of the top Ti layer, despite of the number of applied laser pulses. Interlayer mixing was not observed. Application of laser pulses at fluence of 0.11 J cm
−2
caused partial and/or complete ablation of deposited layers. In partially ablated regions considerable mixing between Ti and Ta films was registered.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-018-1525-x</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Atomic beam spectroscopy ; Atomic force microscopy ; Characterization and Evaluation of Materials ; Computer Communication Networks ; Electrical Engineering ; Fluence ; Focus on Optics and Bio-photonics ; Interlayers ; Irradiation ; Laser beams ; Laser processing ; Lasers ; Multilayers ; Neodymium lasers ; Optical Devices ; Optics ; Oxidation ; Photonica 2017 ; Photonics ; Physics ; Physics and Astronomy ; Scanning electron microscopy ; Semiconductor lasers ; Spectrum analysis ; Thin films ; YAG lasers</subject><ispartof>Optical and quantum electronics, 2018-06, Vol.50 (6), p.1-10, Article 257</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c311t-90bdeafe95740f70734553fb37e6022753d7bb0a44a49027ed04a69a50bbdc593</cites><orcidid>0000-0002-6705-6856</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-018-1525-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-018-1525-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids></links><search><creatorcontrib>Obradović, Marko</creatorcontrib><creatorcontrib>Kovač, Janez</creatorcontrib><creatorcontrib>Petrović, Suzana</creatorcontrib><creatorcontrib>Lazović, Vladimir</creatorcontrib><creatorcontrib>Salatić, Branislav</creatorcontrib><creatorcontrib>Ciganović, Jovan</creatorcontrib><creatorcontrib>Pjević, Dejan</creatorcontrib><creatorcontrib>Milosavljević, Momir</creatorcontrib><creatorcontrib>Peruško, Davor</creatorcontrib><title>Laser induced mixing in multilayered Ti/Ta thin film structures</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>The possibility of interlayer mixing in a Ti/Ta multilayer system, induced by laser irradiation, was the main purpose of these experiments. Ti/Ta multilayer system, consisting of ten alternating Ti and Ta thin films and covered by slightly thicker Ti layer, was deposited on Si (100) wafers to a total thickness of 205 nm. Laser irradiation was performed in air by picoseconds Nd:YAG laser pulses in defocused regime with fluences of 0.057 and 0.11 J cm
−2
. Laser beam was scanned over the 5 × 5 mm surface area with different steps along y-axes. Structural and compositional characterisation was done by auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. Laser processing at lower fluence caused only oxidation of the top Ti layer, despite of the number of applied laser pulses. Interlayer mixing was not observed. Application of laser pulses at fluence of 0.11 J cm
−2
caused partial and/or complete ablation of deposited layers. In partially ablated regions considerable mixing between Ti and Ta films was registered.</description><subject>Atomic beam spectroscopy</subject><subject>Atomic force microscopy</subject><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Electrical Engineering</subject><subject>Fluence</subject><subject>Focus on Optics and Bio-photonics</subject><subject>Interlayers</subject><subject>Irradiation</subject><subject>Laser beams</subject><subject>Laser processing</subject><subject>Lasers</subject><subject>Multilayers</subject><subject>Neodymium lasers</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Oxidation</subject><subject>Photonica 2017</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor lasers</subject><subject>Spectrum analysis</subject><subject>Thin films</subject><subject>YAG lasers</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLw0AUhQdRsFZ_gLuA67H3ziOTWYkUX1BwU8HdMEkmdUqS1pkE2n_vlAiuXF3O4Zxz4SPkFuEeAdQiIkLBKGBBUTJJD2dkhlIxWqD6PCcz4JDTQqO-JFcxbgEgFxJm5GFlowuZ7-uxcnXW-YPvN0lm3dgOvrVHF5K99ou1zYav5De-7bI4hLEaxuDiNblobBvdze-dk4_np_Xyla7eX96WjytaccSBaihrZxunpRLQKFBcSMmbkiuXA2NK8lqVJVghrNDAlKtB2FxbCWVZV1LzObmbdvdh9z26OJjtbgx9emkYSFbkhcxlSuGUqsIuxuAasw--s-FoEMyJk5k4mcTJnDiZQ-qwqRNTtt-48Lf8f-kHgSBqlQ</recordid><startdate>20180601</startdate><enddate>20180601</enddate><creator>Obradović, Marko</creator><creator>Kovač, Janez</creator><creator>Petrović, Suzana</creator><creator>Lazović, Vladimir</creator><creator>Salatić, Branislav</creator><creator>Ciganović, Jovan</creator><creator>Pjević, Dejan</creator><creator>Milosavljević, Momir</creator><creator>Peruško, Davor</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-6705-6856</orcidid></search><sort><creationdate>20180601</creationdate><title>Laser induced mixing in multilayered Ti/Ta thin film structures</title><author>Obradović, Marko ; Kovač, Janez ; Petrović, Suzana ; Lazović, Vladimir ; Salatić, Branislav ; Ciganović, Jovan ; Pjević, Dejan ; Milosavljević, Momir ; Peruško, Davor</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-90bdeafe95740f70734553fb37e6022753d7bb0a44a49027ed04a69a50bbdc593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Atomic beam spectroscopy</topic><topic>Atomic force microscopy</topic><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Electrical Engineering</topic><topic>Fluence</topic><topic>Focus on Optics and Bio-photonics</topic><topic>Interlayers</topic><topic>Irradiation</topic><topic>Laser beams</topic><topic>Laser processing</topic><topic>Lasers</topic><topic>Multilayers</topic><topic>Neodymium lasers</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Oxidation</topic><topic>Photonica 2017</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor lasers</topic><topic>Spectrum analysis</topic><topic>Thin films</topic><topic>YAG lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Obradović, Marko</creatorcontrib><creatorcontrib>Kovač, Janez</creatorcontrib><creatorcontrib>Petrović, Suzana</creatorcontrib><creatorcontrib>Lazović, Vladimir</creatorcontrib><creatorcontrib>Salatić, Branislav</creatorcontrib><creatorcontrib>Ciganović, Jovan</creatorcontrib><creatorcontrib>Pjević, Dejan</creatorcontrib><creatorcontrib>Milosavljević, Momir</creatorcontrib><creatorcontrib>Peruško, Davor</creatorcontrib><collection>CrossRef</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Obradović, Marko</au><au>Kovač, Janez</au><au>Petrović, Suzana</au><au>Lazović, Vladimir</au><au>Salatić, Branislav</au><au>Ciganović, Jovan</au><au>Pjević, Dejan</au><au>Milosavljević, Momir</au><au>Peruško, Davor</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Laser induced mixing in multilayered Ti/Ta thin film structures</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2018-06-01</date><risdate>2018</risdate><volume>50</volume><issue>6</issue><spage>1</spage><epage>10</epage><pages>1-10</pages><artnum>257</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>The possibility of interlayer mixing in a Ti/Ta multilayer system, induced by laser irradiation, was the main purpose of these experiments. Ti/Ta multilayer system, consisting of ten alternating Ti and Ta thin films and covered by slightly thicker Ti layer, was deposited on Si (100) wafers to a total thickness of 205 nm. Laser irradiation was performed in air by picoseconds Nd:YAG laser pulses in defocused regime with fluences of 0.057 and 0.11 J cm
−2
. Laser beam was scanned over the 5 × 5 mm surface area with different steps along y-axes. Structural and compositional characterisation was done by auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. Laser processing at lower fluence caused only oxidation of the top Ti layer, despite of the number of applied laser pulses. Interlayer mixing was not observed. Application of laser pulses at fluence of 0.11 J cm
−2
caused partial and/or complete ablation of deposited layers. In partially ablated regions considerable mixing between Ti and Ta films was registered.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-018-1525-x</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-6705-6856</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Atomic beam spectroscopy Atomic force microscopy Characterization and Evaluation of Materials Computer Communication Networks Electrical Engineering Fluence Focus on Optics and Bio-photonics Interlayers Irradiation Laser beams Laser processing Lasers Multilayers Neodymium lasers Optical Devices Optics Oxidation Photonica 2017 Photonics Physics Physics and Astronomy Scanning electron microscopy Semiconductor lasers Spectrum analysis Thin films YAG lasers |
| title | Laser induced mixing in multilayered Ti/Ta thin film structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T16%3A29%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Laser%20induced%20mixing%20in%20multilayered%20Ti/Ta%20thin%20film%20structures&rft.jtitle=Optical%20and%20quantum%20electronics&rft.au=Obradovi%C4%87,%20Marko&rft.date=2018-06-01&rft.volume=50&rft.issue=6&rft.spage=1&rft.epage=10&rft.pages=1-10&rft.artnum=257&rft.issn=0306-8919&rft.eissn=1572-817X&rft_id=info:doi/10.1007/s11082-018-1525-x&rft_dat=%3Cproquest_cross%3E2052868565%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2052868565&rft_id=info:pmid/&rfr_iscdi=true |