An Experimental Demonstration of Short Circuit Protection of SiC Devices

An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-f...

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Veröffentlicht in:	Materials science forum 2018-06, Vol.924, p.818-821
Hauptverfasser:	Aeloiza, Eddy, Kadavelugu, Arun, Cairoli, Pietro, Rodrigues, Rostan
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit protection Circuits Materials science Short circuits Silicon carbide
Online-Zugang:	Volltext
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