An Experimental Demonstration of Short Circuit Protection of SiC Devices

An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-f...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2018-06, Vol.924, p.818-821
Hauptverfasser: Aeloiza, Eddy, Kadavelugu, Arun, Cairoli, Pietro, Rodrigues, Rostan
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 821
container_issue
container_start_page 818
container_title Materials science forum
container_volume 924
creator Aeloiza, Eddy
Kadavelugu, Arun
Cairoli, Pietro
Rodrigues, Rostan
description An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.
doi_str_mv 10.4028/www.scientific.net/MSF.924.818
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2052525111</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2052525111</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2718-fdb89af8ab8cf5a498972086f1900b0ba3b79f511d0ecd4970c17cb8c8778a7e3</originalsourceid><addsrcrecordid>eNqNkMFKAzEQhoMoWKvvsCB4222S7m6Si1jW1goVheo5ZNOEprSbmqRW396Rir3KHOYw_3zDfAjdEFyUmPLBfr8vonamS846XXQmDZ7mk0LQsuCEn6AeqWuaC1bRU9TDtKryqmT1ObqIcYXxkHBS99B01GXjz60JbgMgtc7uzcZ3MQWVnO8yb7P50oeUNS7onUvZS_DJ6L-Za2Dhw2kTL9GZVetorn57H71Nxq_NNJ89Pzw2o1muKSM8t4uWC2W5arm2lSoFF4xiXlsiMG5xq4YtE7YiZIGNXpSCYU2YhjBnjCtmhn10feBug3_fmZjkyu9CByclxRWFIoRA6vaQ0sHHGIyVW_hQhS9JsPyxJ8GePNqTYE-CPQn2JNgDwN0BACZAh9HL451_Ir4B-zOBPg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2052525111</pqid></control><display><type>article</type><title>An Experimental Demonstration of Short Circuit Protection of SiC Devices</title><source>ProQuest Central Essentials</source><source>ProQuest Central (Alumni Edition)</source><source>ProQuest Central Student</source><source>Scientific.net Journals</source><creator>Aeloiza, Eddy ; Kadavelugu, Arun ; Cairoli, Pietro ; Rodrigues, Rostan</creator><creatorcontrib>Aeloiza, Eddy ; Kadavelugu, Arun ; Cairoli, Pietro ; Rodrigues, Rostan</creatorcontrib><description>An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.924.818</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>Circuit protection ; Circuits ; Materials science ; Short circuits ; Silicon carbide</subject><ispartof>Materials science forum, 2018-06, Vol.924, p.818-821</ispartof><rights>2018 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. Jun 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2718-fdb89af8ab8cf5a498972086f1900b0ba3b79f511d0ecd4970c17cb8c8778a7e3</citedby><cites>FETCH-LOGICAL-c2718-fdb89af8ab8cf5a498972086f1900b0ba3b79f511d0ecd4970c17cb8c8778a7e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/4496?width=600</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/2052525111?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,21389,21390,23256,27924,27925,33530,33703,34314,43659,43787,44067</link.rule.ids></links><search><creatorcontrib>Aeloiza, Eddy</creatorcontrib><creatorcontrib>Kadavelugu, Arun</creatorcontrib><creatorcontrib>Cairoli, Pietro</creatorcontrib><creatorcontrib>Rodrigues, Rostan</creatorcontrib><title>An Experimental Demonstration of Short Circuit Protection of SiC Devices</title><title>Materials science forum</title><description>An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.</description><subject>Circuit protection</subject><subject>Circuits</subject><subject>Materials science</subject><subject>Short circuits</subject><subject>Silicon carbide</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNkMFKAzEQhoMoWKvvsCB4222S7m6Si1jW1goVheo5ZNOEprSbmqRW396Rir3KHOYw_3zDfAjdEFyUmPLBfr8vonamS846XXQmDZ7mk0LQsuCEn6AeqWuaC1bRU9TDtKryqmT1ObqIcYXxkHBS99B01GXjz60JbgMgtc7uzcZ3MQWVnO8yb7P50oeUNS7onUvZS_DJ6L-Za2Dhw2kTL9GZVetorn57H71Nxq_NNJ89Pzw2o1muKSM8t4uWC2W5arm2lSoFF4xiXlsiMG5xq4YtE7YiZIGNXpSCYU2YhjBnjCtmhn10feBug3_fmZjkyu9CByclxRWFIoRA6vaQ0sHHGIyVW_hQhS9JsPyxJ8GePNqTYE-CPQn2JNgDwN0BACZAh9HL451_Ir4B-zOBPg</recordid><startdate>20180605</startdate><enddate>20180605</enddate><creator>Aeloiza, Eddy</creator><creator>Kadavelugu, Arun</creator><creator>Cairoli, Pietro</creator><creator>Rodrigues, Rostan</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope></search><sort><creationdate>20180605</creationdate><title>An Experimental Demonstration of Short Circuit Protection of SiC Devices</title><author>Aeloiza, Eddy ; Kadavelugu, Arun ; Cairoli, Pietro ; Rodrigues, Rostan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2718-fdb89af8ab8cf5a498972086f1900b0ba3b79f511d0ecd4970c17cb8c8778a7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Circuit protection</topic><topic>Circuits</topic><topic>Materials science</topic><topic>Short circuits</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aeloiza, Eddy</creatorcontrib><creatorcontrib>Kadavelugu, Arun</creatorcontrib><creatorcontrib>Cairoli, Pietro</creatorcontrib><creatorcontrib>Rodrigues, Rostan</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Engineered Materials Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aeloiza, Eddy</au><au>Kadavelugu, Arun</au><au>Cairoli, Pietro</au><au>Rodrigues, Rostan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An Experimental Demonstration of Short Circuit Protection of SiC Devices</atitle><jtitle>Materials science forum</jtitle><date>2018-06-05</date><risdate>2018</risdate><volume>924</volume><spage>818</spage><epage>821</epage><pages>818-821</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.</abstract><cop>Pfaffikon</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.924.818</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0255-5476
ispartof Materials science forum, 2018-06, Vol.924, p.818-821
issn 0255-5476
1662-9752
1662-9752
language eng
recordid cdi_proquest_journals_2052525111
source ProQuest Central Essentials; ProQuest Central (Alumni Edition); ProQuest Central Student; Scientific.net Journals
subjects Circuit protection
Circuits
Materials science
Short circuits
Silicon carbide
title An Experimental Demonstration of Short Circuit Protection of SiC Devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T20%3A36%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20Experimental%20Demonstration%20of%20Short%20Circuit%20Protection%20of%20SiC%20Devices&rft.jtitle=Materials%20science%20forum&rft.au=Aeloiza,%20Eddy&rft.date=2018-06-05&rft.volume=924&rft.spage=818&rft.epage=821&rft.pages=818-821&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.924.818&rft_dat=%3Cproquest_cross%3E2052525111%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2052525111&rft_id=info:pmid/&rfr_iscdi=true