An Experimental Demonstration of Short Circuit Protection of SiC Devices
An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-f...
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Veröffentlicht in: | Materials science forum 2018-06, Vol.924, p.818-821 |
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description | An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events. |
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Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.924.818</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>Circuit protection ; Circuits ; Materials science ; Short circuits ; Silicon carbide</subject><ispartof>Materials science forum, 2018-06, Vol.924, p.818-821</ispartof><rights>2018 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. 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Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.</description><subject>Circuit protection</subject><subject>Circuits</subject><subject>Materials science</subject><subject>Short circuits</subject><subject>Silicon carbide</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNkMFKAzEQhoMoWKvvsCB4222S7m6Si1jW1goVheo5ZNOEprSbmqRW396Rir3KHOYw_3zDfAjdEFyUmPLBfr8vonamS846XXQmDZ7mk0LQsuCEn6AeqWuaC1bRU9TDtKryqmT1ObqIcYXxkHBS99B01GXjz60JbgMgtc7uzcZ3MQWVnO8yb7P50oeUNS7onUvZS_DJ6L-Za2Dhw2kTL9GZVetorn57H71Nxq_NNJ89Pzw2o1muKSM8t4uWC2W5arm2lSoFF4xiXlsiMG5xq4YtE7YiZIGNXpSCYU2YhjBnjCtmhn10feBug3_fmZjkyu9CByclxRWFIoRA6vaQ0sHHGIyVW_hQhS9JsPyxJ8GePNqTYE-CPQn2JNgDwN0BACZAh9HL451_Ir4B-zOBPg</recordid><startdate>20180605</startdate><enddate>20180605</enddate><creator>Aeloiza, Eddy</creator><creator>Kadavelugu, Arun</creator><creator>Cairoli, Pietro</creator><creator>Rodrigues, Rostan</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope></search><sort><creationdate>20180605</creationdate><title>An Experimental Demonstration of Short Circuit Protection of SiC Devices</title><author>Aeloiza, Eddy ; 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Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.</abstract><cop>Pfaffikon</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.924.818</doi><tpages>4</tpages></addata></record> |
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subjects | Circuit protection Circuits Materials science Short circuits Silicon carbide |
title | An Experimental Demonstration of Short Circuit Protection of SiC Devices |
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