In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers

We present in-situ observations of the dynamical operation of multiple double-ended Frank-Read dislocation sources in a PVT-grown 4H-SiC wafer under thermal gradient stresses. The nucleation of these sources is facilitated by a specific configuration consisting of one basal plane dislocation (BPD) s...

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Veröffentlicht in:Materials science forum 2018-06, Vol.924, p.172-175
Hauptverfasser: Yang, Yu, McNally, Patrick J., Weit, Swetlana, Danilewsky, Andreas N., Raghothamachar, Balaji, Guo, Jian Qiu, Dudley, Michael, Tanner, Brian R.
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Sprache:eng
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