Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations

This study investigated the relationship between the forward voltage degradation induced by SSF expansion and (a) BPD density in substrates and epitaxial layers of SiC, and (b) the temperature during the application forward current to the pin diodes. The Vf shift caused by the BPDs in the drift laye...

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Veröffentlicht in:	Materials science forum 2018-06, Vol.924, p.143-146
Hauptverfasser:	Kamei, Koji, Momose, Kenji, Osawa, Hiroshi, Nishihara, Yoshitaka
Format:	Artikel
Sprache:	eng
Schlagworte:	Basal plane Dislocations
Online-Zugang:	Volltext
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