Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs

Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs

External Schottky barrier diodes (SBDs) used as free-wheel diodes should be larger in higher voltage devices to avoid bipolar degradation consequent on current conduction of body diodes in SiC MOSFETs. By embedding an external SBD into an SiC MOSFET, we achieved compact 3.3 kV and 6.5 kV SiC MOSFETs...

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Veröffentlicht in:Materials science forum 2018-06, Vol.924, p.663-666
Hauptverfasser: Iwamatsu, Toshiaki, Nakata, Shuhei, Sadamatsu, Koji, Kawahara, Koutarou, Yamakawa, Satoshi, Hino, Shiro, Nakao, Yukiyasu, Tomohisa, Shingo
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MOSFETs
Schottky diodes
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container_issue
container_start_page 663
container_title Materials science forum
container_volume 924
creator Iwamatsu, Toshiaki
Nakata, Shuhei
Sadamatsu, Koji
Kawahara, Koutarou
Yamakawa, Satoshi
Hino, Shiro
Nakao, Yukiyasu
Tomohisa, Shingo
description External Schottky barrier diodes (SBDs) used as free-wheel diodes should be larger in higher voltage devices to avoid bipolar degradation consequent on current conduction of body diodes in SiC MOSFETs. By embedding an external SBD into an SiC MOSFET, we achieved compact 3.3 kV and 6.5 kV SiC MOSFETs that are free from bipolar degradation. The active area of the 3.3 kV/6.5 kV samples is only about a half/quarter of the total active area of a conventional MOSFET and a coupled external SBD.
doi_str_mv 10.4028/www.scientific.net/MSF.924.663
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2052522665</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2052522665</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2713-e9c208fc30cf3fb6f2f9a200a3df1ee82c4aae15a27d60c8e0467d0f1e3d9a503</originalsourceid><addsrcrecordid>eNqNkE1PAjEURRujiYj-hyYm7mbox7QzszEqgpKALFC3TemHFGQG2xLCv7cEE7au3st7N-cmB4A7jPICkaq32-3yoJxporNO5Y2JvclsmNekyDmnZ6CDOSdZXTJyDjqIMJaxouSX4CqEJUIUV5h3wNtovZEqwtbCwXputHbNF5ypRRvjag-fpPfOePjsWm0CdE1sIc0pXH1C2WjIc3ZYZ64PJ9PZcPAersGFld_B3PzNLvhI5_5rNp6-jPqP40yREtPM1IqgyiqKlKV2zi2xtSQISaotNqYiqpDSYCZJqTlSlUEFLzVKP6pryRDtgtsjd-Pbn60JUSzbrW9SpSCIEUYI5yyl7o8p5dsQvLFi491a-r3ASBwciuRQnByK5FAkhyI5FMlhAjwcAdHLJkSjFqeefyJ-ARO4gLE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2052522665</pqid></control><display><type>article</type><title>Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs</title><source>Scientific.net Journals</source><creator>Iwamatsu, Toshiaki ; Nakata, Shuhei ; Sadamatsu, Koji ; Kawahara, Koutarou ; Yamakawa, Satoshi ; Hino, Shiro ; Nakao, Yukiyasu ; Tomohisa, Shingo</creator><creatorcontrib>Iwamatsu, Toshiaki ; Nakata, Shuhei ; Sadamatsu, Koji ; Kawahara, Koutarou ; Yamakawa, Satoshi ; Hino, Shiro ; Nakao, Yukiyasu ; Tomohisa, Shingo</creatorcontrib><description>External Schottky barrier diodes (SBDs) used as free-wheel diodes should be larger in higher voltage devices to avoid bipolar degradation consequent on current conduction of body diodes in SiC MOSFETs. By embedding an external SBD into an SiC MOSFET, we achieved compact 3.3 kV and 6.5 kV SiC MOSFETs that are free from bipolar degradation. The active area of the 3.3 kV/6.5 kV samples is only about a half/quarter of the total active area of a conventional MOSFET and a coupled external SBD.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.924.663</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>MOSFETs ; Schottky diodes</subject><ispartof>Materials science forum, 2018-06, Vol.924, p.663-666</ispartof><rights>2018 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. Jun 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2713-e9c208fc30cf3fb6f2f9a200a3df1ee82c4aae15a27d60c8e0467d0f1e3d9a503</citedby><cites>FETCH-LOGICAL-c2713-e9c208fc30cf3fb6f2f9a200a3df1ee82c4aae15a27d60c8e0467d0f1e3d9a503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/4496?width=600</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Iwamatsu, Toshiaki</creatorcontrib><creatorcontrib>Nakata, Shuhei</creatorcontrib><creatorcontrib>Sadamatsu, Koji</creatorcontrib><creatorcontrib>Kawahara, Koutarou</creatorcontrib><creatorcontrib>Yamakawa, Satoshi</creatorcontrib><creatorcontrib>Hino, Shiro</creatorcontrib><creatorcontrib>Nakao, Yukiyasu</creatorcontrib><creatorcontrib>Tomohisa, Shingo</creatorcontrib><title>Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs</title><title>Materials science forum</title><description>External Schottky barrier diodes (SBDs) used as free-wheel diodes should be larger in higher voltage devices to avoid bipolar degradation consequent on current conduction of body diodes in SiC MOSFETs. By embedding an external SBD into an SiC MOSFET, we achieved compact 3.3 kV and 6.5 kV SiC MOSFETs that are free from bipolar degradation. The active area of the 3.3 kV/6.5 kV samples is only about a half/quarter of the total active area of a conventional MOSFET and a coupled external SBD.</description><subject>MOSFETs</subject><subject>Schottky diodes</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNqNkE1PAjEURRujiYj-hyYm7mbox7QzszEqgpKALFC3TemHFGQG2xLCv7cEE7au3st7N-cmB4A7jPICkaq32-3yoJxporNO5Y2JvclsmNekyDmnZ6CDOSdZXTJyDjqIMJaxouSX4CqEJUIUV5h3wNtovZEqwtbCwXputHbNF5ypRRvjag-fpPfOePjsWm0CdE1sIc0pXH1C2WjIc3ZYZ64PJ9PZcPAersGFld_B3PzNLvhI5_5rNp6-jPqP40yREtPM1IqgyiqKlKV2zi2xtSQISaotNqYiqpDSYCZJqTlSlUEFLzVKP6pryRDtgtsjd-Pbn60JUSzbrW9SpSCIEUYI5yyl7o8p5dsQvLFi491a-r3ASBwciuRQnByK5FAkhyI5FMlhAjwcAdHLJkSjFqeefyJ-ARO4gLE</recordid><startdate>20180605</startdate><enddate>20180605</enddate><creator>Iwamatsu, Toshiaki</creator><creator>Nakata, Shuhei</creator><creator>Sadamatsu, Koji</creator><creator>Kawahara, Koutarou</creator><creator>Yamakawa, Satoshi</creator><creator>Hino, Shiro</creator><creator>Nakao, Yukiyasu</creator><creator>Tomohisa, Shingo</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope></search><sort><creationdate>20180605</creationdate><title>Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs</title><author>Iwamatsu, Toshiaki ; Nakata, Shuhei ; Sadamatsu, Koji ; Kawahara, Koutarou ; Yamakawa, Satoshi ; Hino, Shiro ; Nakao, Yukiyasu ; Tomohisa, Shingo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2713-e9c208fc30cf3fb6f2f9a200a3df1ee82c4aae15a27d60c8e0467d0f1e3d9a503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>MOSFETs</topic><topic>Schottky diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Iwamatsu, Toshiaki</creatorcontrib><creatorcontrib>Nakata, Shuhei</creatorcontrib><creatorcontrib>Sadamatsu, Koji</creatorcontrib><creatorcontrib>Kawahara, Koutarou</creatorcontrib><creatorcontrib>Yamakawa, Satoshi</creatorcontrib><creatorcontrib>Hino, Shiro</creatorcontrib><creatorcontrib>Nakao, Yukiyasu</creatorcontrib><creatorcontrib>Tomohisa, Shingo</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Engineered Materials Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Iwamatsu, Toshiaki</au><au>Nakata, Shuhei</au><au>Sadamatsu, Koji</au><au>Kawahara, Koutarou</au><au>Yamakawa, Satoshi</au><au>Hino, Shiro</au><au>Nakao, Yukiyasu</au><au>Tomohisa, Shingo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs</atitle><jtitle>Materials science forum</jtitle><date>2018-06-05</date><risdate>2018</risdate><volume>924</volume><spage>663</spage><epage>666</epage><pages>663-666</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>External Schottky barrier diodes (SBDs) used as free-wheel diodes should be larger in higher voltage devices to avoid bipolar degradation consequent on current conduction of body diodes in SiC MOSFETs. By embedding an external SBD into an SiC MOSFET, we achieved compact 3.3 kV and 6.5 kV SiC MOSFETs that are free from bipolar degradation. The active area of the 3.3 kV/6.5 kV samples is only about a half/quarter of the total active area of a conventional MOSFET and a coupled external SBD.</abstract><cop>Pfaffikon</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.924.663</doi><tpages>4</tpages></addata></record>
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subjects MOSFETs
Schottky diodes
title Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T11%3A49%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Impact%20of%20Embedding%20Schottky%20Barrier%20Diodes%20into%203.3%20kV%20and%206.5%20kV%20SiC%20MOSFETs&rft.jtitle=Materials%20science%20forum&rft.au=Iwamatsu,%20Toshiaki&rft.date=2018-06-05&rft.volume=924&rft.spage=663&rft.epage=666&rft.pages=663-666&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.924.663&rft_dat=%3Cproquest_cross%3E2052522665%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2052522665&rft_id=info:pmid/&rfr_iscdi=true