Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remai...

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Veröffentlicht in:	Materials science forum 2018-06, Vol.924, p.339-344, Article 339
Hauptverfasser:	Rascunà, Simone, Vivona, Marilena, Lo Nigro, Raffaella, Saggio, Mario, Greco, Giuseppe, Roccaforte, Fabrizio, Giannazzo, Filippo
Format:	Artikel
Sprache:	eng
Schlagworte:	Silicon carbide
Online-Zugang:	Volltext
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