Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2018-06, Vol.924, p.357-360
Hauptverfasser:	Litrico, Grazia, Zimbone, Massimo, di Stefano, Maria Ausilia, Piluso, Nicolo, Lorenti, Simona, Reitano, Riccardo, Canino, Mariaconcetta, La Via, Francesco, Nipoti, Roberta
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Ion implantation
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!