Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We f...
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| Veröffentlicht in: | Materials science forum 2018-06, Vol.924, p.357-360 |
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| creator | Litrico, Grazia Zimbone, Massimo di Stefano, Maria Ausilia Piluso, Nicolo Lorenti, Simona Reitano, Riccardo Canino, Mariaconcetta La Via, Francesco Nipoti, Roberta |
| description | Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n-and p-type zones of the device. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.924.357 |
| format | Article |
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| subjects | Annealing Ion implantation |
| title | Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET |
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