Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

Depth profiling of the ambipolar carrier lifetime was performed in n-type, 140mm thick silicon carbide (SiC) epilayer using excitation by two-photon absorption (TPA) with a pulsed 586nm laser, and confocal measurement of time resolved photoluminescence (TRPL) decay from the excited region. A depth r...

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Veröffentlicht in:	Materials science forum 2018-06, Vol.924, p.265-268
Hauptverfasser:	Klein, Paul B., Mahadik, Nadeemullah A., Khachatrian, Ani, Buchner, Stephen, Stahlbush, Robert E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier lifetime Depth profiling Lasers Photon absorption Silicon carbide
Online-Zugang:	Volltext
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