Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs

In this work, we investigate the effect of borosilicate glass (BSG) as gate dielectric on dielectric/4H-SiC interface traps and channel mobility in 4H-SiC MOSFETs. The interface trap characterization by C−ψs analysis and I-V characterization show lower fast interface trap density (Dit) as well as si...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2018-06, Vol.924, p.502-505
Hauptverfasser:	Zheng, Yong Ju, Dhar, Sarit, Isaacs-Smith, Tamara, Ahyi, Ayayi Claude
Format:	Artikel
Sprache:	eng
Schlagworte:	Borosilicate glass MOSFETs Silicon
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!