Preparation and optoelectronic properties of a-IGZO thin films deposited by RF magnetron sputtering at different working pressures

Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest hall mobility...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Rare metals 2018-07, Vol.37 (7), p.599-603
Hauptverfasser:	Ma, Rui-Xin, Xiao, Yu-Qin, Li, Shi-Na, Wang, Yuan-Yuan, Li, Dong-Ran, He, Liang-Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Biomaterials Blue shift Carrier density Chemistry and Materials Science Crystal structure Electron mobility Energy Hall effect Indium gallium zinc oxide Magnetic properties Magnetron sputtering Materials Engineering Materials Science Metallic Materials Morphology Nanoscale Science and Technology Optical properties Optoelectronics Physical Chemistry Pressure effects Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!