Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs

The effects of the surface roughness of trench sidewalls on electrical properties have been investigated in 4H-SiC trench MOSFETs. The surface roughness of trench sidewalls was well controlled and evaluated by atomic force microscopy. The effective channel mobility at each measurement temperature wa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2018-04, Vol.57 (4S), p.4
Hauptverfasser:	Kutsuki, Katsuhiro, Murakami, Yuki, Watanabe, Yukihiko, Onishi, Toru, Yamamoto, Kensaku, Fujiwara, Hirokazu, Ito, Takahiro
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Current leakage Dielectric breakdown Electrical properties Gates Leakage current Morphology MOSFETs Scattering Surface roughness Time dependence
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!