Resistive switching characteristics of interfacial phase-change memory at elevated temperature

Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the high-resistance (RES...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2018-04, Vol.57 (4S), p.4
Hauptverfasser:	Mitrofanov, Kirill V., Saito, Yuta, Miyata, Noriyuki, Fons, Paul, Kolobov, Alexander V., Tominaga, Junji
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Computer memory Electric contacts High temperature Memory devices Phase change Phase transitions Switching Tellurium Thermal stability
Online-Zugang:	Volltext
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