Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatteri...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2018-04, Vol.57 (4S), p.4
Hauptverfasser:	Hoshino, Tomoki, Mori, Nobuya
Format:	Artikel
Sprache:	eng
Schlagworte:	Deformation mechanisms Dependence Dipoles Electron gas Electron mobility Electrons Gallium nitrides Heterostructures High electron mobility transistors Indium gallium nitrides Mathematical analysis Scattering Semiconductor devices Transistors
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