Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures
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Veröffentlicht in: | Journal of electronic materials 1997-06, Vol.26 (6), p.635-642 |
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container_title | Journal of electronic materials |
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creator | Weiler, M. H. Tarnowski, G. J. |
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doi_str_mv | 10.1007/s11664-997-0208-3 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_204845247</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>13795781</sourcerecordid><originalsourceid>FETCH-LOGICAL-c270t-8082f555543eed3707474a090c22fa72d821e548d70cc6c79fcff767fc98de3d3</originalsourceid><addsrcrecordid>eNotkE9LxDAUxIMouK5-AG_BezT_2qRHKeoKC15W8BZi8rLtsjY1SQX99HZd32UOM8w8fghdM3rLKFV3mbG6lqRpFKGcaiJO0IJVUhCm67dTtKCiZqTiojpHFznvKGUV02yBUtvZZF2B1P_Y0scBx4BX29ZvAI8kDmTAHcxu3E2D-_PHLpbo--ghYzt4XDroE_YQwJWMp9wPW_xlU2_f90BsAosL5IJzSZMrU4J8ic6C3We4-tclen182LQrsn55em7v18RxRQvRVPNQzScFgBeKKqmkpQ11nAeruNecQSW1V9S52qkmuBBUrYJrtAfhxRLdHHvHFD-n-Qezi1Ma5knDqdSy4lLNIXYMuRRzThDMmPoPm74No-ZA1hzJmpmsOZA1QvwCULptzA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>204845247</pqid></control><display><type>article</type><title>Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures</title><source>SpringerNature Journals</source><creator>Weiler, M. H. ; Tarnowski, G. J.</creator><creatorcontrib>Weiler, M. H. ; Tarnowski, G. J.</creatorcontrib><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-997-0208-3</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Warrendale: Springer Nature B.V</publisher><ispartof>Journal of electronic materials, 1997-06, Vol.26 (6), p.635-642</ispartof><rights>Copyright Minerals, Metals & Materials Society Jun 1997</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c270t-8082f555543eed3707474a090c22fa72d821e548d70cc6c79fcff767fc98de3d3</citedby><cites>FETCH-LOGICAL-c270t-8082f555543eed3707474a090c22fa72d821e548d70cc6c79fcff767fc98de3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Weiler, M. H.</creatorcontrib><creatorcontrib>Tarnowski, G. J.</creatorcontrib><title>Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures</title><title>Journal of electronic materials</title><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNotkE9LxDAUxIMouK5-AG_BezT_2qRHKeoKC15W8BZi8rLtsjY1SQX99HZd32UOM8w8fghdM3rLKFV3mbG6lqRpFKGcaiJO0IJVUhCm67dTtKCiZqTiojpHFznvKGUV02yBUtvZZF2B1P_Y0scBx4BX29ZvAI8kDmTAHcxu3E2D-_PHLpbo--ghYzt4XDroE_YQwJWMp9wPW_xlU2_f90BsAosL5IJzSZMrU4J8ic6C3We4-tclen182LQrsn55em7v18RxRQvRVPNQzScFgBeKKqmkpQ11nAeruNecQSW1V9S52qkmuBBUrYJrtAfhxRLdHHvHFD-n-Qezi1Ma5knDqdSy4lLNIXYMuRRzThDMmPoPm74No-ZA1hzJmpmsOZA1QvwCULptzA</recordid><startdate>19970601</startdate><enddate>19970601</enddate><creator>Weiler, M. H.</creator><creator>Tarnowski, G. J.</creator><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>19970601</creationdate><title>Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures</title><author>Weiler, M. H. ; Tarnowski, G. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-8082f555543eed3707474a090c22fa72d821e548d70cc6c79fcff767fc98de3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Weiler, M. H.</creatorcontrib><creatorcontrib>Tarnowski, G. J.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Weiler, M. H.</au><au>Tarnowski, G. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures</atitle><jtitle>Journal of electronic materials</jtitle><date>1997-06-01</date><risdate>1997</risdate><volume>26</volume><issue>6</issue><spage>635</spage><epage>642</epage><pages>635-642</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><cop>Warrendale</cop><pub>Springer Nature B.V</pub><doi>10.1007/s11664-997-0208-3</doi><tpages>8</tpages></addata></record> |
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title | Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T00%3A00%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20of%20HgCdTe%20p-on-n%20heterojunction%20photodiodes%20and%20their%20defects%20using%20variable-area%20test%20structures&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=Weiler,%20M.%20H.&rft.date=1997-06-01&rft.volume=26&rft.issue=6&rft.spage=635&rft.epage=642&rft.pages=635-642&rft.issn=0361-5235&rft.eissn=1543-186X&rft.coden=JECMA5&rft_id=info:doi/10.1007/s11664-997-0208-3&rft_dat=%3Cproquest_cross%3E13795781%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=204845247&rft_id=info:pmid/&rfr_iscdi=true |