Growth of BaSi^sub 2^ continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi^sub 2^/n-Ge heterojunction solar cells

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates....

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