35‐1: Strategy for Developing an Ultra‐High‐Luminance AMOLED Display
To obtain a high‐luminance active‐matrix organic light‐emitting diode (AMOLED) display compatible with the high‐dynamic‐range (HDR) technology, we investigated the effect of basic components, e.g., field‐effect transistor, pixel circuit, OLED structure, and organic material. Combining these technolo...
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Veröffentlicht in: | SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.433-436 |
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creator | Eguchi, Shingo Nakamura, Daiki Kusunoki, Koji Kawashima, Susumu Takita, Yusuke Seo, Satoshi Dobashi, Masayoshi Misawa, Chieko Nakada, Masataka Yamazaki, Shunpei |
description | To obtain a high‐luminance active‐matrix organic light‐emitting diode (AMOLED) display compatible with the high‐dynamic‐range (HDR) technology, we investigated the effect of basic components, e.g., field‐effect transistor, pixel circuit, OLED structure, and organic material. Combining these technologies, we fabricated a high‐luminance display with a peak luminance exceeding 3,000 cd/m2. |
doi_str_mv | 10.1002/sdtp.12593 |
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subjects | Active matrix displays CAAC-IGZO Diodes HDR OLED Organic light emitting diodes Pixel AI |
title | 35‐1: Strategy for Developing an Ultra‐High‐Luminance AMOLED Display |
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