Transient Current Response for ZnO Nanorod‐Based Doubly Transparent UV Sensor Fabricated on Flexible Substrate

We present the transient current response for a ZnO nanorod‐based doubly transparent UV sensor. ZnO nanorods (ZNRs) are sandwiched between indium tin oxide (ITO) electrodes to make the device doubly transparent on a flexible polyethylene terephthalate (PET) substrate. The average ZNR length and diam...

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Veröffentlicht in:Physica status solidi. PSS-RRL. Rapid research letters 2018-05, Vol.12 (5), p.n/a
Hauptverfasser: Rana, Abu ul Hassan Sarwar, Lee, Ji Young, Hong, You‐Pyo, Kim, Hyun‐Seok
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description We present the transient current response for a ZnO nanorod‐based doubly transparent UV sensor. ZnO nanorods (ZNRs) are sandwiched between indium tin oxide (ITO) electrodes to make the device doubly transparent on a flexible polyethylene terephthalate (PET) substrate. The average ZNR length and diameter are 1.7 μm and 62 nm, respectively, and the ITO is perfectly sputtered upon ZNR surface. All the ZNRs are c‐axis oriented perpendicular to the substrate with a typical hexagonal wurtzite ZnO structure. Photoluminescence spectra show a typical high‐intensity peak near 375 nm and a broad peak in the visible region. UV sensing is confirmed by testing ZNR current–voltage characteristics and transient current response under UV on–off conditions for straight and inflexed ZNRs. The sensor shows a 2.3 times increase in current intensity under UV illumination at 4 V. The transient current shows a typical sinusoidal wave‐like response with three prominent regions under constant voltage supply. The recovery time is almost five‐times of the response time, which confirms the five‐times faster boundary hole trapping in the sensor than their release on the flexible substrate. Also, the current intensity decreases for an unilluminated flexed device and increases for an UV‐illuminated flexed device because of strain‐induced ZNR piezotronic effects under flexible deformation. The transient current response for a ZnO nanorod‐based doubly transparent UV sensor is tested for straight and inflexed ZnO nanorods on a flexible polyethylene terephthalate (PET) substrate. The device shows an increase and a decrease in transient current intensity under strain‐free UV on–off conditions. Additionally, the UV transient current intensity is further increased in a flexed device because of strain‐induced charge separation effect.
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The recovery time is almost five‐times of the response time, which confirms the five‐times faster boundary hole trapping in the sensor than their release on the flexible substrate. Also, the current intensity decreases for an unilluminated flexed device and increases for an UV‐illuminated flexed device because of strain‐induced ZNR piezotronic effects under flexible deformation. The transient current response for a ZnO nanorod‐based doubly transparent UV sensor is tested for straight and inflexed ZnO nanorods on a flexible polyethylene terephthalate (PET) substrate. The device shows an increase and a decrease in transient current intensity under strain‐free UV on–off conditions. 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PSS-RRL. Rapid research letters</title><description>We present the transient current response for a ZnO nanorod‐based doubly transparent UV sensor. ZnO nanorods (ZNRs) are sandwiched between indium tin oxide (ITO) electrodes to make the device doubly transparent on a flexible polyethylene terephthalate (PET) substrate. The average ZNR length and diameter are 1.7 μm and 62 nm, respectively, and the ITO is perfectly sputtered upon ZNR surface. All the ZNRs are c‐axis oriented perpendicular to the substrate with a typical hexagonal wurtzite ZnO structure. Photoluminescence spectra show a typical high‐intensity peak near 375 nm and a broad peak in the visible region. UV sensing is confirmed by testing ZNR current–voltage characteristics and transient current response under UV on–off conditions for straight and inflexed ZNRs. The sensor shows a 2.3 times increase in current intensity under UV illumination at 4 V. 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The average ZNR length and diameter are 1.7 μm and 62 nm, respectively, and the ITO is perfectly sputtered upon ZNR surface. All the ZNRs are c‐axis oriented perpendicular to the substrate with a typical hexagonal wurtzite ZnO structure. Photoluminescence spectra show a typical high‐intensity peak near 375 nm and a broad peak in the visible region. UV sensing is confirmed by testing ZNR current–voltage characteristics and transient current response under UV on–off conditions for straight and inflexed ZNRs. The sensor shows a 2.3 times increase in current intensity under UV illumination at 4 V. The transient current shows a typical sinusoidal wave‐like response with three prominent regions under constant voltage supply. The recovery time is almost five‐times of the response time, which confirms the five‐times faster boundary hole trapping in the sensor than their release on the flexible substrate. Also, the current intensity decreases for an unilluminated flexed device and increases for an UV‐illuminated flexed device because of strain‐induced ZNR piezotronic effects under flexible deformation. The transient current response for a ZnO nanorod‐based doubly transparent UV sensor is tested for straight and inflexed ZnO nanorods on a flexible polyethylene terephthalate (PET) substrate. The device shows an increase and a decrease in transient current intensity under strain‐free UV on–off conditions. Additionally, the UV transient current intensity is further increased in a flexed device because of strain‐induced charge separation effect.</abstract><cop>Berlin</cop><pub>WILEY?VCH Verlag Berlin GmbH</pub><doi>10.1002/pssr.201800001</doi><tpages>5</tpages></addata></record>
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subjects Current voltage characteristics
Deformation effects
flexible devices
Indium tin oxides
Nanorods
Photoluminescence
Polyethylene terephthalate
polyethylene terephthalate (PET)
Recovery time
Response time
Sensors
Substrates
Tin oxides
Transient current
UV sensors
Wurtzite
Zinc oxide
ZnO
title Transient Current Response for ZnO Nanorod‐Based Doubly Transparent UV Sensor Fabricated on Flexible Substrate
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