Controlling the properties of ZnO thin films by varying precursor concentration

This paper reports the synthesis of zinc oxide (ZnO) nanofibers, changing the molar concentration (M) of zinc acetate dihydrate (ZnAc) using 2-methoxyethanol and monoethanolamine. X-ray diffraction pattern reveal that ZnO thin films indicate good crystallinity at high precursor concentration. Atomic...

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Veröffentlicht in:Journal of alloys and compounds 2018-04, Vol.741, p.957-968
Hauptverfasser: Soylu, M., Coskun, M.
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Coskun, M.
description This paper reports the synthesis of zinc oxide (ZnO) nanofibers, changing the molar concentration (M) of zinc acetate dihydrate (ZnAc) using 2-methoxyethanol and monoethanolamine. X-ray diffraction pattern reveal that ZnO thin films indicate good crystallinity at high precursor concentration. Atomic force microscopy (AFM) images show the formation of ZnO nanofibers. The optical properties changing with increasing concentration are understood from the recorded transmittance, absorbance and reflectance measurements. The band-gap narrowing (from 3.28 eV to 3.22 eV) of n-type ZnO thin films is observed through the absorption edge by an increase in molar concentration. n-ZnO/p-Si heterojunction structure exhibits low rectifying ratio (RR). The current-voltage (I-V) characteristics show that the conductivity increases as the molar concentration of precursor decreases from 0.5 to 0.2 M. An optimum value of molar percentage for precursor concentration of ZnAc is promising for photovoltaic and display applications. [Display omitted] •ZnO thin films were fabricated on glass substrates.•Solution molarity affected main optic parameters.•The diode parameters of ZnO/p-Si were found to depend on molar rate.
doi_str_mv 10.1016/j.jallcom.2018.01.079
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X-ray diffraction pattern reveal that ZnO thin films indicate good crystallinity at high precursor concentration. Atomic force microscopy (AFM) images show the formation of ZnO nanofibers. The optical properties changing with increasing concentration are understood from the recorded transmittance, absorbance and reflectance measurements. The band-gap narrowing (from 3.28 eV to 3.22 eV) of n-type ZnO thin films is observed through the absorption edge by an increase in molar concentration. n-ZnO/p-Si heterojunction structure exhibits low rectifying ratio (RR). The current-voltage (I-V) characteristics show that the conductivity increases as the molar concentration of precursor decreases from 0.5 to 0.2 M. An optimum value of molar percentage for precursor concentration of ZnAc is promising for photovoltaic and display applications. 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subjects Atomic force microscopy
Atomic structure
Current voltage characteristics
Diffraction patterns
Glass substrates
Heterojunction
Heterojunctions
Molarity
Monoethanolamine (MEA)
Nanofibers
Optical properties
Precursors
Reflectance
Thin films
X-ray diffraction
Zinc acetate
Zinc oxide
Zinc oxides
ZnO
title Controlling the properties of ZnO thin films by varying precursor concentration
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