Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy

We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy considering the (0001) and surface states. Surface reconstruction, which depends on growth conditions such as temperature and partial pressure, affects growth processes. To discuss the effects of surface states on growth p...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2017-07, Vol.56 (7), p.070304
Hauptverfasser:	Kusaba, Akira, Kangawa, Yoshihiro, Kempisty, Pawel, Valencia, Hubert, Shiraishi, Kenji, Kumagai, Yoshinao, Kakimoto, Koichi, Koukitu, Akinori
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier gases Epitaxy Metalorganic chemical vapor deposition Partial pressure
Online-Zugang:	Volltext
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