Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed related to the changes in semiconductor space char...
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| Veröffentlicht in: | Microelectronic engineering 2018-02, Vol.187-188, p.134-138 |
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| container_title | Microelectronic engineering |
| container_volume | 187-188 |
| creator | Tikhov, S.V. Mikhaylov, A.N. Belov, A.I. Korolev, D.S. Antonov, I.N. Karzanov, V.V. Gorshkov, O.N. Tetelbaum, D.I. Karakolis, P. Dimitrakis, P. |
| description | Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed related to the changes in semiconductor space charge region on the small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.
[Display omitted]
•Fully CMOS-compatible Au/Si3N4/n+-Si memristors are fabricated.•Intrinsic bipolar resistive switching is observed in Si3N4/Si nanostructure.•n+-Si substrate affects the small-signal parameters in different resistive states. |
| doi_str_mv | 10.1016/j.mee.2017.11.002 |
| format | Article |
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[Display omitted]
•Fully CMOS-compatible Au/Si3N4/n+-Si memristors are fabricated.•Intrinsic bipolar resistive switching is observed in Si3N4/Si nanostructure.•n+-Si substrate affects the small-signal parameters in different resistive states.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2017.11.002</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Bipolar resistive switching ; Capacitor ; Capacitors ; Equivalent circuits ; Gold ; Insulators ; Light illumination ; Memristor ; MIS (semiconductors) ; Nanomaterials ; Plates (structural members) ; Semiconductors ; Signal processing ; Silicon nitride ; Silicon substrates ; Small-signal measurements ; Space charge ; Switching</subject><ispartof>Microelectronic engineering, 2018-02, Vol.187-188, p.134-138</ispartof><rights>2017 Elsevier B.V.</rights><rights>Copyright Elsevier BV Feb 5, 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-3c775cd3bfaf02eb0ffc145906039d25e06d88bfc1d8b386fa9796aad87a62713</citedby><cites>FETCH-LOGICAL-c325t-3c775cd3bfaf02eb0ffc145906039d25e06d88bfc1d8b386fa9796aad87a62713</cites><orcidid>0000-0001-5505-7352</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2017.11.002$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27926,27927,45997</link.rule.ids></links><search><creatorcontrib>Tikhov, S.V.</creatorcontrib><creatorcontrib>Mikhaylov, A.N.</creatorcontrib><creatorcontrib>Belov, A.I.</creatorcontrib><creatorcontrib>Korolev, D.S.</creatorcontrib><creatorcontrib>Antonov, I.N.</creatorcontrib><creatorcontrib>Karzanov, V.V.</creatorcontrib><creatorcontrib>Gorshkov, O.N.</creatorcontrib><creatorcontrib>Tetelbaum, D.I.</creatorcontrib><creatorcontrib>Karakolis, P.</creatorcontrib><creatorcontrib>Dimitrakis, P.</creatorcontrib><title>Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors</title><title>Microelectronic engineering</title><description>Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed related to the changes in semiconductor space charge region on the small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.
[Display omitted]
•Fully CMOS-compatible Au/Si3N4/n+-Si memristors are fabricated.•Intrinsic bipolar resistive switching is observed in Si3N4/Si nanostructure.•n+-Si substrate affects the small-signal parameters in different resistive states.</description><subject>Bipolar resistive switching</subject><subject>Capacitor</subject><subject>Capacitors</subject><subject>Equivalent circuits</subject><subject>Gold</subject><subject>Insulators</subject><subject>Light illumination</subject><subject>Memristor</subject><subject>MIS (semiconductors)</subject><subject>Nanomaterials</subject><subject>Plates (structural members)</subject><subject>Semiconductors</subject><subject>Signal processing</subject><subject>Silicon nitride</subject><subject>Silicon substrates</subject><subject>Small-signal measurements</subject><subject>Space charge</subject><subject>Switching</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kN9LwzAQx4MoOKd_gG8Bn1uTdk1afJLhj8FEcPoc0uS63eiammST_fe2zGefjju-n7vjQ8gtZylnXNxv0x1AmjEuU85TxrIzMuGlzJOiEOU5mQwZmVQ5l5fkKoQtG_oZKyek_nAtUNfQDa437ZFa14OlK6RhX4fodQSKHa2xd6321EPAEPEANPxgNBvs1iMbsEXjOtph9GiBvi1WidG9NhidD9fkotFtgJu_OiVfz0-f89dk-f6ymD8uE5NnRUxyI2VhbF43umEZ1KxpDJ8VFRMsr2xWABO2LOthaMs6L0WjK1kJrW0ptcgkz6fk7rS39-57DyGqrdv7bjipMjbjUlSVGFP8lDLeheChUb3HnfZHxZkaVaqtGlSqUaXiXA0qB-bhxMDw_gHBq2AQOgMWPZiorMN_6F9V63zW</recordid><startdate>20180205</startdate><enddate>20180205</enddate><creator>Tikhov, S.V.</creator><creator>Mikhaylov, A.N.</creator><creator>Belov, A.I.</creator><creator>Korolev, D.S.</creator><creator>Antonov, I.N.</creator><creator>Karzanov, V.V.</creator><creator>Gorshkov, O.N.</creator><creator>Tetelbaum, D.I.</creator><creator>Karakolis, P.</creator><creator>Dimitrakis, P.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5505-7352</orcidid></search><sort><creationdate>20180205</creationdate><title>Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors</title><author>Tikhov, S.V. ; Mikhaylov, A.N. ; Belov, A.I. ; Korolev, D.S. ; Antonov, I.N. ; Karzanov, V.V. ; Gorshkov, O.N. ; Tetelbaum, D.I. ; Karakolis, P. ; Dimitrakis, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-3c775cd3bfaf02eb0ffc145906039d25e06d88bfc1d8b386fa9796aad87a62713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Bipolar resistive switching</topic><topic>Capacitor</topic><topic>Capacitors</topic><topic>Equivalent circuits</topic><topic>Gold</topic><topic>Insulators</topic><topic>Light illumination</topic><topic>Memristor</topic><topic>MIS (semiconductors)</topic><topic>Nanomaterials</topic><topic>Plates (structural members)</topic><topic>Semiconductors</topic><topic>Signal processing</topic><topic>Silicon nitride</topic><topic>Silicon substrates</topic><topic>Small-signal measurements</topic><topic>Space charge</topic><topic>Switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tikhov, S.V.</creatorcontrib><creatorcontrib>Mikhaylov, A.N.</creatorcontrib><creatorcontrib>Belov, A.I.</creatorcontrib><creatorcontrib>Korolev, D.S.</creatorcontrib><creatorcontrib>Antonov, I.N.</creatorcontrib><creatorcontrib>Karzanov, V.V.</creatorcontrib><creatorcontrib>Gorshkov, O.N.</creatorcontrib><creatorcontrib>Tetelbaum, D.I.</creatorcontrib><creatorcontrib>Karakolis, P.</creatorcontrib><creatorcontrib>Dimitrakis, P.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tikhov, S.V.</au><au>Mikhaylov, A.N.</au><au>Belov, A.I.</au><au>Korolev, D.S.</au><au>Antonov, I.N.</au><au>Karzanov, V.V.</au><au>Gorshkov, O.N.</au><au>Tetelbaum, D.I.</au><au>Karakolis, P.</au><au>Dimitrakis, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors</atitle><jtitle>Microelectronic engineering</jtitle><date>2018-02-05</date><risdate>2018</risdate><volume>187-188</volume><spage>134</spage><epage>138</epage><pages>134-138</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed related to the changes in semiconductor space charge region on the small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.
[Display omitted]
•Fully CMOS-compatible Au/Si3N4/n+-Si memristors are fabricated.•Intrinsic bipolar resistive switching is observed in Si3N4/Si nanostructure.•n+-Si substrate affects the small-signal parameters in different resistive states.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2017.11.002</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-5505-7352</orcidid></addata></record> |
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| ispartof | Microelectronic engineering, 2018-02, Vol.187-188, p.134-138 |
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| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Bipolar resistive switching Capacitor Capacitors Equivalent circuits Gold Insulators Light illumination Memristor MIS (semiconductors) Nanomaterials Plates (structural members) Semiconductors Signal processing Silicon nitride Silicon substrates Small-signal measurements Space charge Switching |
| title | Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors |
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