Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standard material available in CMOS processes. Ferroelect...

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Veröffentlicht in:	MRS bulletin 2018-05, Vol.43 (5), p.340-346
Hauptverfasser:	Mikolajick, Thomas, Slesazeck, Stefan, Park, Min Hyuk, Schroeder, Uwe
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied and Technical Physics Atomic layer epitaxy Capacitors Characterization and Evaluation of Materials CMOS Coercivity Endurance Energy Materials Ferroelectric materials Ferroelectricity Ferroelectrics Field effect transistors Hafnium oxide Information storage Laboratories Materials Engineering Materials for Advanced Semiconductor Memories Materials Science Metal oxide semiconductors Nanotechnology Phase transitions Random access memory Scaling Semiconductor devices Silicon
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