Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

This study investigates various tests on AlGaN/GaN high electron mobility transistor (HEMT) wafers, including photoluminescence spectroscopy, secondary ion mass spectroscopy, X‐ray diffraction (XRD), and Hall measurement. The AlGaN/GaN HEMT wafers are grown on low‐resistivity Si substrates with vari...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2018-05, Vol.215 (9), p.n/a
Hauptverfasser:	Zhong, Yi‐Nan, Tang, Shun‐Wei, Hsin, Yue‐Ming
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides buffers Carbon Correlation analysis Electron mobility GaN Hall effect high electron mobility transistor High electron mobility transistors Indicators Luminescence Photoluminescence photoluminescences Secondary ion mass spectroscopy Semiconductor devices Silicon substrates Spectrum analysis traps wafer tests Wafers X-ray diffraction
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