Improving the Light‐Extraction Efficiency of AlGaN DUV‐LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector

AlGaN based deep‐ultraviolet light‐emitting diodes (DUV‐LEDs) have a wide range of applications and a large market is expected. However, the efficiency of DUV‐LEDs is still much lower than that of blue LEDs due to a quite low light‐extraction efficiency (LEE). We improved the LEE of DUV‐LEDs by usin...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2018-04, Vol.215 (8), p.n/a
Hauptverfasser:	Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides deep‐ultraviolet light‐emitting diodes Economic conditions Efficiency Electrodes external quantum efficiency Light emitting diodes Nickel Organic light emitting diodes reflective electrodes Spreading superlattice Superlattices Ultraviolet radiation
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