GaNの添加によるCrNの硬度改善とその固溶限評価

In order to improve in hardness of CrN thin film, solubility limit of B1(NaCl type)-GaN in the B1-(Cr,Ga)N phase was evaluated. Cr-Ga-N thin films with various GaN contents were prepared on MgO(100) substrates by pulsed laser deposition. Rutherford backscattering spectroscopy revealed that the ratio...

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Veröffentlicht in:	Nihon Kinzoku Gakkai shi (1952) 2018/04/01, Vol.82(4), pp.89-93
Hauptverfasser:	水野, 遊星, 中山, 忠親, 末松, 久幸, 鈴木, 常生
Format:	Artikel
Sprache:	jpn
Schlagworte:	Backscattering Chromium nitride gallium nitride hard coating Hardness Indentation Pulsed laser deposition Rutherford backscattering spectroscopy Sodium chloride solid solution hardening Solubility Substrates Thin films X-ray diffraction Zincblende
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