Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia

Aluminum nitride (AlN x ) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N 2 H 4 ) or ammonia (NH 3 ). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH 3 ) at temperatures from 15...

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Veröffentlicht in:	Russian microelectronics 2018-03, Vol.47 (2), p.118-130
Hauptverfasser:	Abdulagatov, A. I., Ramazanov, Sh. M., Dallaev, R. S., Murliev, E. K., Palchaev, D. K., Rabadanov, M. Kh, Abdulagatov, I. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum nitride Ammonia Atomic layer epitaxy Bulk density Electrical Engineering Engineering Impurities Surface reactions Thermochemistry
Online-Zugang:	Volltext
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