Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions
We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without p – n junctions when subnanosecond high-voltage pulses are applied. Silicon n + – n – n + type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche swi...
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| Veröffentlicht in: | Technical physics letters 2018-02, Vol.44 (2), p.160-163 |
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| container_end_page | 163 |
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| container_title | Technical physics letters |
| container_volume | 44 |
| creator | Brylevskiy, V. I. Smirnova, I. A. Podolska, N. I. Zharova, Yu. A. Rodin, P. B. Grekhov, I. V. |
| description | We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without
p
–
n
junctions when subnanosecond high-voltage pulses are applied. Silicon
n
+
–
n
–
n
+
type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased
p
+
–
n
–
n
+
diode structures. Experimental data are compared to the results of numerical simulations. |
| doi_str_mv | 10.1134/S1063785018020177 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2020987686</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2020987686</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-59ffaeeecc7b8e8d763db2fbfe74cb291a89698f8bb9a7058d479e5ee52d08c63</originalsourceid><addsrcrecordid>eNp1kN1KwzAYhosoOKcX4FnA42rSrE1yOOffZLCD6XFJ06-us0tqkm5OELwH79ArsaWCB-LR98L788ETBKcEnxNCRxcLghPKeIwJxxEmjO0FA4IFDpOY0v1OJzTs_MPgyLkVxphHsRgE79evNdhyDdrLCs0zB3YjfWk0MgW6gkruIEfTdS2VD6dGl2-9Od7ISmq1BHRpQT7nZqtRqdEC1qUyOm-UNxYtvG1FY8GhbemXpvGo_vr41Oi-0aqbccfBQSErByc_dxg83lw_TO7C2fx2OhnPQkVJ4sNYFIUEAKVYxoHnLKF5FhVZAWykskgQyUUieMGzTEiGY56PmIAYII5yzFVCh8FZv1tb89KA8-nKNFa3L9OoxSU4S3iXIn1KWeOchSKtWzLS7lKC045y-ody24n6jmuz-gns7_L_pW_ObIMH</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2020987686</pqid></control><display><type>article</type><title>Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions</title><source>SpringerNature Journals</source><creator>Brylevskiy, V. I. ; Smirnova, I. A. ; Podolska, N. I. ; Zharova, Yu. A. ; Rodin, P. B. ; Grekhov, I. V.</creator><creatorcontrib>Brylevskiy, V. I. ; Smirnova, I. A. ; Podolska, N. I. ; Zharova, Yu. A. ; Rodin, P. B. ; Grekhov, I. V.</creatorcontrib><description>We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without
p
–
n
junctions when subnanosecond high-voltage pulses are applied. Silicon
n
+
–
n
–
n
+
type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased
p
+
–
n
–
n
+
diode structures. Experimental data are compared to the results of numerical simulations.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785018020177</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Avalanches ; Breakdown ; Classical and Continuum Physics ; Computer simulation ; Contact resistance ; Dynamic structural analysis ; Ionization ; P-n junctions ; Physics ; Physics and Astronomy ; Switching ; Voltage pulses ; Zinc selenide</subject><ispartof>Technical physics letters, 2018-02, Vol.44 (2), p.160-163</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-59ffaeeecc7b8e8d763db2fbfe74cb291a89698f8bb9a7058d479e5ee52d08c63</citedby><cites>FETCH-LOGICAL-c316t-59ffaeeecc7b8e8d763db2fbfe74cb291a89698f8bb9a7058d479e5ee52d08c63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063785018020177$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063785018020177$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27929,27930,41493,42562,51324</link.rule.ids></links><search><creatorcontrib>Brylevskiy, V. I.</creatorcontrib><creatorcontrib>Smirnova, I. A.</creatorcontrib><creatorcontrib>Podolska, N. I.</creatorcontrib><creatorcontrib>Zharova, Yu. A.</creatorcontrib><creatorcontrib>Rodin, P. B.</creatorcontrib><creatorcontrib>Grekhov, I. V.</creatorcontrib><title>Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without
p
–
n
junctions when subnanosecond high-voltage pulses are applied. Silicon
n
+
–
n
–
n
+
type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased
p
+
–
n
–
n
+
diode structures. Experimental data are compared to the results of numerical simulations.</description><subject>Avalanches</subject><subject>Breakdown</subject><subject>Classical and Continuum Physics</subject><subject>Computer simulation</subject><subject>Contact resistance</subject><subject>Dynamic structural analysis</subject><subject>Ionization</subject><subject>P-n junctions</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Switching</subject><subject>Voltage pulses</subject><subject>Zinc selenide</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kN1KwzAYhosoOKcX4FnA42rSrE1yOOffZLCD6XFJ06-us0tqkm5OELwH79ArsaWCB-LR98L788ETBKcEnxNCRxcLghPKeIwJxxEmjO0FA4IFDpOY0v1OJzTs_MPgyLkVxphHsRgE79evNdhyDdrLCs0zB3YjfWk0MgW6gkruIEfTdS2VD6dGl2-9Od7ISmq1BHRpQT7nZqtRqdEC1qUyOm-UNxYtvG1FY8GhbemXpvGo_vr41Oi-0aqbccfBQSErByc_dxg83lw_TO7C2fx2OhnPQkVJ4sNYFIUEAKVYxoHnLKF5FhVZAWykskgQyUUieMGzTEiGY56PmIAYII5yzFVCh8FZv1tb89KA8-nKNFa3L9OoxSU4S3iXIn1KWeOchSKtWzLS7lKC045y-ody24n6jmuz-gns7_L_pW_ObIMH</recordid><startdate>20180201</startdate><enddate>20180201</enddate><creator>Brylevskiy, V. I.</creator><creator>Smirnova, I. A.</creator><creator>Podolska, N. I.</creator><creator>Zharova, Yu. A.</creator><creator>Rodin, P. B.</creator><creator>Grekhov, I. V.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20180201</creationdate><title>Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions</title><author>Brylevskiy, V. I. ; Smirnova, I. A. ; Podolska, N. I. ; Zharova, Yu. A. ; Rodin, P. B. ; Grekhov, I. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-59ffaeeecc7b8e8d763db2fbfe74cb291a89698f8bb9a7058d479e5ee52d08c63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Avalanches</topic><topic>Breakdown</topic><topic>Classical and Continuum Physics</topic><topic>Computer simulation</topic><topic>Contact resistance</topic><topic>Dynamic structural analysis</topic><topic>Ionization</topic><topic>P-n junctions</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Switching</topic><topic>Voltage pulses</topic><topic>Zinc selenide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Brylevskiy, V. I.</creatorcontrib><creatorcontrib>Smirnova, I. A.</creatorcontrib><creatorcontrib>Podolska, N. I.</creatorcontrib><creatorcontrib>Zharova, Yu. A.</creatorcontrib><creatorcontrib>Rodin, P. B.</creatorcontrib><creatorcontrib>Grekhov, I. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Brylevskiy, V. I.</au><au>Smirnova, I. A.</au><au>Podolska, N. I.</au><au>Zharova, Yu. A.</au><au>Rodin, P. B.</au><au>Grekhov, I. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2018-02-01</date><risdate>2018</risdate><volume>44</volume><issue>2</issue><spage>160</spage><epage>163</epage><pages>160-163</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without
p
–
n
junctions when subnanosecond high-voltage pulses are applied. Silicon
n
+
–
n
–
n
+
type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased
p
+
–
n
–
n
+
diode structures. Experimental data are compared to the results of numerical simulations.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785018020177</doi><tpages>4</tpages></addata></record> |
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| ispartof | Technical physics letters, 2018-02, Vol.44 (2), p.160-163 |
| issn | 1063-7850 1090-6533 |
| language | eng |
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| source | SpringerNature Journals |
| subjects | Avalanches Breakdown Classical and Continuum Physics Computer simulation Contact resistance Dynamic structural analysis Ionization P-n junctions Physics Physics and Astronomy Switching Voltage pulses Zinc selenide |
| title | Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions |
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