Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories

There is an increasing demand for high-density memories with high stability for supercomputers in this big data era. Traditional dynamic random access memory cannot satisfy this requirement due to its limitation of volatile and power-consumable data storage. Multi-level cell phase-change memory (MLC...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (13), p.3387-3394
Hauptverfasser:	Li, Chao, Hu, Chaoquan, Wang, Jianbo, Yu, Xiao, Yang, Zhongbo, Liu, Jian, Li, Yuankai, Bi, Chaobin, Zhou, Xilin, Zheng, Weitao
Format:	Artikel
Sprache:	eng
Schlagworte:	Data management Data storage Dielectric properties Dielectric relaxation Drift Dynamic random access memory Dynamic stability Hydrogen storage Low resistance Phase change materials Power consumption Random access memory Strategy Supercomputers Thermal stability
Online-Zugang:	Volltext
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