Ni-V(or Cr) Co-addition Cu alloy films with high stability and low resistivity
In order to inhibit Cu, interconnecting in ultra-large-scale integration, from diffusing with surrounding dielectric materials and enhance its chemical inertness and maintain its excellent electrical performance as well. In this paper, the stable solid solution cluster-plus-glue-atom model was used...
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Veröffentlicht in: | Materials chemistry and physics 2018-02, Vol.205, p.253-260 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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