Ni-V(or Cr) Co-addition Cu alloy films with high stability and low resistivity

In order to inhibit Cu, interconnecting in ultra-large-scale integration, from diffusing with surrounding dielectric materials and enhance its chemical inertness and maintain its excellent electrical performance as well. In this paper, the stable solid solution cluster-plus-glue-atom model was used...

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Veröffentlicht in:Materials chemistry and physics 2018-02, Vol.205, p.253-260
Hauptverfasser: Zheng, Y.H., Li, X.N., Cheng, X.T., Sun, W., Liu, M., Liu, Y.B., Wang, M., Dong, C.
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Sprache:eng
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