Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure
Bismuth telluride (Bi 2 Te 3 ), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative u...
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| Veröffentlicht in: | Journal of electronic materials 2018-08, Vol.47 (8), p.4277-4281 |
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| container_title | Journal of electronic materials |
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| creator | Concepción, O. Escobosa, A. de Melo, O. |
| description | Bismuth telluride (Bi
2
Te
3
), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi
2
Te
3
by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality. |
| doi_str_mv | 10.1007/s11664-018-6190-0 |
| format | Article |
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2
Te
3
), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi
2
Te
3
by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-018-6190-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>18th International Conference on II-VI Compounds and Related Materials ; Atmospheric pressure ; Bismuth compounds ; Bismuth tellurides ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electronics and Microelectronics ; High vacuum ; Instrumentation ; Intermetallic compounds ; Low pressure ; Materials research ; Materials Science ; Optical and Electronic Materials ; Quantum computing ; Solid State Physics ; Spintronics ; Tellurides ; Thermoelectric materials ; Topical Collection: 18th International Conference on II-VI Compounds ; Transport ; Vapor phases</subject><ispartof>Journal of electronic materials, 2018-08, Vol.47 (8), p.4277-4281</ispartof><rights>The Minerals, Metals & Materials Society 2018</rights><rights>Journal of Electronic Materials is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-dd06c626dbba306997adcd99c33604148b71bdbef8b1deb472caa4164e39ef663</citedby><cites>FETCH-LOGICAL-c316t-dd06c626dbba306997adcd99c33604148b71bdbef8b1deb472caa4164e39ef663</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-018-6190-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-018-6190-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Concepción, O.</creatorcontrib><creatorcontrib>Escobosa, A.</creatorcontrib><creatorcontrib>de Melo, O.</creatorcontrib><title>Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Bismuth telluride (Bi
2
Te
3
), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi
2
Te
3
by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality.</description><subject>18th International Conference on II-VI Compounds and Related Materials</subject><subject>Atmospheric pressure</subject><subject>Bismuth compounds</subject><subject>Bismuth tellurides</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electronics and Microelectronics</subject><subject>High vacuum</subject><subject>Instrumentation</subject><subject>Intermetallic compounds</subject><subject>Low pressure</subject><subject>Materials research</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Quantum computing</subject><subject>Solid State Physics</subject><subject>Spintronics</subject><subject>Tellurides</subject><subject>Thermoelectric materials</subject><subject>Topical Collection: 18th International Conference on II-VI Compounds</subject><subject>Transport</subject><subject>Vapor phases</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kMtOwzAQRS0EEuXxAewssTZ44sRN2LUVtEhIgCiIneXYkzZVEwc7UdWv4JdJWyRWrGYx594ZHUKugN8A58PbACBlzDikTELGGT8iA0hiwSCVn8dkwIUElkQiOSVnIaw4hwRSGJDvD904T1-WOiCderdpl9QVdFYuluy10-uy3dJxyeZIJ65qXFfbQN9DWS_o_RorrFu97vdU15b2zJvrvMFwR0d7XPsyuJqOsd0g1vtS-qFN11X7wKitXGiW6EtDXzyG0Hm8ICeFXge8_J3n5P3hfj6Zsafn6eNk9MSMANkya7k0MpI2z7XgMsuG2hqbZUYIyWOI03wIuc2xSHOwmMfDyGgdg4xRZFhIKc7J9aG38e6rw9CqVf973Z9UUe8mzpKM7yg4UMa7EDwWqvFlpf1WAVc77-rgXfXe1c674n0mOmRCz9YL9H_N_4d-AMBUhoc</recordid><startdate>20180801</startdate><enddate>20180801</enddate><creator>Concepción, O.</creator><creator>Escobosa, A.</creator><creator>de Melo, O.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20180801</creationdate><title>Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure</title><author>Concepción, O. ; Escobosa, A. ; de Melo, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-dd06c626dbba306997adcd99c33604148b71bdbef8b1deb472caa4164e39ef663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>18th International Conference on II-VI Compounds and Related Materials</topic><topic>Atmospheric pressure</topic><topic>Bismuth compounds</topic><topic>Bismuth tellurides</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electronics and Microelectronics</topic><topic>High vacuum</topic><topic>Instrumentation</topic><topic>Intermetallic compounds</topic><topic>Low pressure</topic><topic>Materials research</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Quantum computing</topic><topic>Solid State Physics</topic><topic>Spintronics</topic><topic>Tellurides</topic><topic>Thermoelectric materials</topic><topic>Topical Collection: 18th International Conference on II-VI Compounds</topic><topic>Transport</topic><topic>Vapor phases</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Concepción, O.</creatorcontrib><creatorcontrib>Escobosa, A.</creatorcontrib><creatorcontrib>de Melo, O.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Concepción, O.</au><au>Escobosa, A.</au><au>de Melo, O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2018-08-01</date><risdate>2018</risdate><volume>47</volume><issue>8</issue><spage>4277</spage><epage>4281</epage><pages>4277-4281</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Bismuth telluride (Bi
2
Te
3
), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi
2
Te
3
by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-018-6190-0</doi><tpages>5</tpages></addata></record> |
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| ispartof | Journal of electronic materials, 2018-08, Vol.47 (8), p.4277-4281 |
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| subjects | 18th International Conference on II-VI Compounds and Related Materials Atmospheric pressure Bismuth compounds Bismuth tellurides Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics High vacuum Instrumentation Intermetallic compounds Low pressure Materials research Materials Science Optical and Electronic Materials Quantum computing Solid State Physics Spintronics Tellurides Thermoelectric materials Topical Collection: 18th International Conference on II-VI Compounds Transport Vapor phases |
| title | Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure |
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