Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

The 3-D scaling rules for the cathode cells and threshold voltages of a 1.2-kV trench clustered insulated gate bipolar transistors (TCIGBTs) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor act...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-04, Vol.65 (4), p.1440-1446
Hauptverfasser:	Luo, Peng, Long, Hong Yao, Sweet, Mark R., De Souza, Maria Merlyne, Narayanan, Ekkanath Madathil Sankara
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V ce(sat) – <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">E off tradeoff Cathodes clustered IGBT (CIGBT) Conduction losses Contacts Current density Electric currents Electric potential insulated gate bipolar transistor (IGBT) Insulated gate bipolar transistors Junctions Logic gates Mathematical models Numerical analysis power semiconductor device Scaling factors scaling rule self-clamping feature Semiconductor devices Short circuits short-circuit capability Thyristors Transistors Voltage drop
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