MOVPE growth and transport characterization of Bi2−xSbxTe3−ySey films

•MOVPE epitaxy of Bi2−xSbxTe3−ySey films on sapphire substrate.•Characterization of the grown films by EDX spectroscopy, SEM and AFM.•van der Pauw Hall effect measurements at 10–300 K.•Some films change the conductivity from p- to n- type with decreasing temperature. We present a first study of film...

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Veröffentlicht in:	Journal of crystal growth 2018-02, Vol.483, p.216-222
Hauptverfasser:	Kuznetsov, P.I., Yakushcheva, G.G., Shchamkhalova, B.S., Jitov, V.A., Temiryazev, A.G., Sizov, V.E., Yapaskurt, V.O.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Solid solutions A2. Metalorganic vapor phase epitaxy A3. Surfaces Antimony Atmospheric pressure B1. Bi-Sb-Te-Se chalcogenides B2. Topological insulators Bismuth compounds Buffer layers Coalescing Conductivity Epitaxial growth Hall effect interfaces and thin films Metalorganic chemical vapor deposition Sapphire Solid solutions Stoichiometry Substrates Transport properties Zinc tellurides
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