Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

•Development of a lateral liquid-phase epitaxy growth technique.•First report of a parallel network of misfit dislocations in SiGe layers on Si (0 0 1).•Blanket layer with asymmetric strain deposited in a single step. Uniaxially strained Si1−xGex channels have been proposed as a solution for high mo...

Ausführliche Beschreibung