Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH 4 ) 2 S aqueous sol...

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Veröffentlicht in:	Technical physics letters 2018, Vol.44 (1), p.81-83
Hauptverfasser:	Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Classical and Continuum Physics Epitaxial growth Nucleation Physics Physics and Astronomy Pretreatment Regular Papers Silicon Silicon substrates Single crystals Vapor phase epitaxy
Online-Zugang:	Volltext
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