PbSe mid-IR photoconductive thin films (part-II): Structural analysis of the functional layer

Photoconducting thin films on the basis of PbSe have been used as functional materials for infrared detectors. The photoconducting sensor function is established by annealing PbSe films in oxygen rich and iodine rich atmospheres. Under such conditions, new, chemically more complex phases are formed...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of alloys and compounds 2018-02, Vol.735, p.1654-1661
Hauptverfasser:	Kumar, Praveen, Pfeffer, Michael, Berthold, Christoph, Eibl, Oliver
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Chemical composition Diffraction Diffraction patterns Electron diffraction Electron energy Electron energy loss spectroscopy Electrons Grain size Infrared detectors Iodine Lattice parameters Lead Nanostructured materials Parameter identification Phase transitions Photoconductivity Polycrystals Selenium Sex Single crystals Structural analysis Surfaces and interfaces Thin films Transmission electron microscopy
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!