Study of reaction process on Ni/4H-SiC contact
The present study deals with mechanisms of the reaction process of fabricated thin film Ni/SiC contacts by means of XRD, XPS and Raman spectroscopy. After annealing SiC samples sputter coated with Ni at 800 and 950°C in vacuum for 20 min, the dominant silicide is textured Ni 2 Si. Its formation cons...
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| Veröffentlicht in: | Materials science and technology 2006-10, Vol.22 (10), p.1227-1234 |
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| container_title | Materials science and technology |
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| creator | Cao, Y. Nyborg, L. Yi, D.-Q. Jelvestam, U. |
| description | The present study deals with mechanisms of the reaction process of fabricated thin film Ni/SiC contacts by means of XRD, XPS and Raman spectroscopy. After annealing SiC samples sputter coated with Ni at 800 and 950°C in vacuum for 20 min, the dominant silicide is textured Ni
2
Si. Its formation consists of two stages: initial reaction rate and subsequent diffusion controlled stage. For ultra thin initial Ni layer (∼3-6 nm), islands formation of Ni
2
Si is observed after heat treatment. Increasing the Ni film thickness prevents this phenomenon. The C released owing to the Ni
2
Si formation reaction forms a thin graphite layer on the top of the surface and also tends to form cluster inside the reaction layer. The overall degree of graphitisation is higher at 950°C than that at 800°C. |
| doi_str_mv | 10.1179/174328406X118276 |
| format | Article |
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2
Si. Its formation consists of two stages: initial reaction rate and subsequent diffusion controlled stage. For ultra thin initial Ni layer (∼3-6 nm), islands formation of Ni
2
Si is observed after heat treatment. Increasing the Ni film thickness prevents this phenomenon. The C released owing to the Ni
2
Si formation reaction forms a thin graphite layer on the top of the surface and also tends to form cluster inside the reaction layer. The overall degree of graphitisation is higher at 950°C than that at 800°C.</description><identifier>ISSN: 0267-0836</identifier><identifier>EISSN: 1743-2847</identifier><identifier>DOI: 10.1179/174328406X118276</identifier><identifier>CODEN: MSCTEP</identifier><language>eng</language><publisher>London, England: Taylor & Francis</publisher><subject>Annealing ; Chemical reactions ; INTERFACIAL REACTION ; METAL CONTACT ; SILICON CARBIDE ; Spectrum analysis ; Thin films</subject><ispartof>Materials science and technology, 2006-10, Vol.22 (10), p.1227-1234</ispartof><rights>2006 Maney Publishing 2006</rights><rights>2006 Maney Publishing</rights><rights>Copyright Institute of Materials Oct 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c488t-a63c4eda951b1b9edb287facfce29385fc47410ffd3b3c6329c0d7c272a98c063</citedby><cites>FETCH-LOGICAL-c488t-a63c4eda951b1b9edb287facfce29385fc47410ffd3b3c6329c0d7c272a98c063</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://journals.sagepub.com/doi/pdf/10.1179/174328406X118276$$EPDF$$P50$$Gsage$$H</linktopdf><linktohtml>$$Uhttps://journals.sagepub.com/doi/10.1179/174328406X118276$$EHTML$$P50$$Gsage$$H</linktohtml><link.rule.ids>315,781,785,21824,27929,27930,43626,43627</link.rule.ids></links><search><creatorcontrib>Cao, Y.</creatorcontrib><creatorcontrib>Nyborg, L.</creatorcontrib><creatorcontrib>Yi, D.-Q.</creatorcontrib><creatorcontrib>Jelvestam, U.</creatorcontrib><title>Study of reaction process on Ni/4H-SiC contact</title><title>Materials science and technology</title><description>The present study deals with mechanisms of the reaction process of fabricated thin film Ni/SiC contacts by means of XRD, XPS and Raman spectroscopy. After annealing SiC samples sputter coated with Ni at 800 and 950°C in vacuum for 20 min, the dominant silicide is textured Ni
2
Si. Its formation consists of two stages: initial reaction rate and subsequent diffusion controlled stage. For ultra thin initial Ni layer (∼3-6 nm), islands formation of Ni
2
Si is observed after heat treatment. Increasing the Ni film thickness prevents this phenomenon. The C released owing to the Ni
2
Si formation reaction forms a thin graphite layer on the top of the surface and also tends to form cluster inside the reaction layer. The overall degree of graphitisation is higher at 950°C than that at 800°C.</description><subject>Annealing</subject><subject>Chemical reactions</subject><subject>INTERFACIAL REACTION</subject><subject>METAL CONTACT</subject><subject>SILICON CARBIDE</subject><subject>Spectrum analysis</subject><subject>Thin films</subject><issn>0267-0836</issn><issn>1743-2847</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqFkE1LAzEQhoMoWKt3j4sHb2nz1XzgSYpaoeihCt5CNpvIlu2mJrtI_70pKwgFFQZmmHnel5kB4BKjCcZCTbFglEiG-BvGkgh-BEb7Fsw9cQxGiHABkaT8FJyltEYIcaXUCExWXV_tiuCL6Izt6tAW2xisS6nI5VM9ZQu4queFDW2X5-fgxJsmuYvvPAav93cv8wVcPj88zm-X0DIpO2g4tcxVRs1wiUvlqpJI4Y311hFF5cxbJhhG3le0pJZToiyqhCWCGCUt4nQMrgffvMxH71KnN3WyrmlM60KfNGUqB6H_gkTNOKWSZPDqAFyHPrb5CE0QRhxhvIfQANkYUorO622sNybuNEZ6_2Z9-OYsgYMkmXf34_kHfzPwdetD3JjPEJtKd2bXhOijaW2dr_tV_QUXTI0-</recordid><startdate>20061001</startdate><enddate>20061001</enddate><creator>Cao, Y.</creator><creator>Nyborg, L.</creator><creator>Yi, D.-Q.</creator><creator>Jelvestam, U.</creator><general>Taylor & Francis</general><general>SAGE Publications</general><general>Taylor & Francis Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20061001</creationdate><title>Study of reaction process on Ni/4H-SiC contact</title><author>Cao, Y. ; Nyborg, L. ; Yi, D.-Q. ; Jelvestam, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c488t-a63c4eda951b1b9edb287facfce29385fc47410ffd3b3c6329c0d7c272a98c063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Annealing</topic><topic>Chemical reactions</topic><topic>INTERFACIAL REACTION</topic><topic>METAL CONTACT</topic><topic>SILICON CARBIDE</topic><topic>Spectrum analysis</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cao, Y.</creatorcontrib><creatorcontrib>Nyborg, L.</creatorcontrib><creatorcontrib>Yi, D.-Q.</creatorcontrib><creatorcontrib>Jelvestam, U.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Engineered Materials Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Materials science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cao, Y.</au><au>Nyborg, L.</au><au>Yi, D.-Q.</au><au>Jelvestam, U.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of reaction process on Ni/4H-SiC contact</atitle><jtitle>Materials science and technology</jtitle><date>2006-10-01</date><risdate>2006</risdate><volume>22</volume><issue>10</issue><spage>1227</spage><epage>1234</epage><pages>1227-1234</pages><issn>0267-0836</issn><eissn>1743-2847</eissn><coden>MSCTEP</coden><abstract>The present study deals with mechanisms of the reaction process of fabricated thin film Ni/SiC contacts by means of XRD, XPS and Raman spectroscopy. After annealing SiC samples sputter coated with Ni at 800 and 950°C in vacuum for 20 min, the dominant silicide is textured Ni
2
Si. Its formation consists of two stages: initial reaction rate and subsequent diffusion controlled stage. For ultra thin initial Ni layer (∼3-6 nm), islands formation of Ni
2
Si is observed after heat treatment. Increasing the Ni film thickness prevents this phenomenon. The C released owing to the Ni
2
Si formation reaction forms a thin graphite layer on the top of the surface and also tends to form cluster inside the reaction layer. The overall degree of graphitisation is higher at 950°C than that at 800°C.</abstract><cop>London, England</cop><pub>Taylor & Francis</pub><doi>10.1179/174328406X118276</doi><tpages>8</tpages></addata></record> |
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| language | eng |
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| subjects | Annealing Chemical reactions INTERFACIAL REACTION METAL CONTACT SILICON CARBIDE Spectrum analysis Thin films |
| title | Study of reaction process on Ni/4H-SiC contact |
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