Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study

Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface layers. In addition to typical highly defective layers in as-implanted material, a 50 nm-thick sub-su...

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Veröffentlicht in:	Applied nanoscience 2019-07, Vol.9 (5), p.725-730
Hauptverfasser:	Bonchyk, O. Yu, Savytskyy, H. V., Swiatek, Z., Morgiel, Y., Izhnin, I. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Fitsych, O. I., Varavin, V. S., Dvoretsky, S. A., Marin, D. V., Yakushev, M. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Arsenic Bright annealing Chemistry and Materials Science Defect annealing Defects Dislocation loops Electron microscopy Implantation Materials Science Membrane Biology Mercury cadmium tellurides Nanochemistry Nanotechnology Nanotechnology and Microengineering Original Article Radiation damage Radiation effects Surface layers Transformations
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