Atomistic behaviour of (n×3)-reconstructed areas of InAs–GaAs(001) surface at the growth condition

We have investigated the spatial evolution of (n×3) surface reconstructed areas during the molecular beam epitaxial growth of InAs–GaAs(001) by using ab initio-based calculation and in situ observation, in order to understand the mechanism of consequent QD nucleation. Statistical analysis of (n×3)-r...

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