Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD
In this work, ZnTe thin films were grown by pulsed laser deposition technique with the aim of study their structural and optical behaviors as function of deposition pressure and consider their potential application in optoelectronic devices. Hence, to obtain the stoichiometric ZnTe phase, the deposi...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2018-05, Vol.29 (9), p.7629-7636 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Ochoa-Estrella, F. J. Vera-Marquina, A. Mejia, I. Leal-Cruz, A. L. Quevedo-López, M. |
| description | In this work, ZnTe thin films were grown by pulsed laser deposition technique with the aim of study their structural and optical behaviors as function of deposition pressure and consider their potential application in optoelectronic devices. Hence, to obtain the stoichiometric ZnTe phase, the deposition temperature was considered as constant (286 °C) during growth process and deposition pressure was varied, as follow: 1, 20, 50, and 100 mTorr. After that, deposited films were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and UV–Vis spectroscopy techniques. Characterization results reveals that deposited films correspond to stoichiometric, nanostructured, uniform and monophasic deposits of ZnTe with a strong preferential orientation in the (111) plane. It is noteworthy that thickness, grain size and crystal size of the films do not show a linear dependence on the range of deposition pressure. On the other hand, UV–Vis spectroscopy results indicate that band gap values of ZnTe films can be tuned in the range of 2.43–2.56 eV as function of deposition pressure. Lastly, it is consider that ZnTe thin films deposited at 20 mTorr present the best match between structural and optical characteristics for potential applications in development of optoelectronic devices. |
| doi_str_mv | 10.1007/s10854-018-8755-3 |
| format | Article |
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J. ; Vera-Marquina, A. ; Mejia, I. ; Leal-Cruz, A. L. ; Quevedo-López, M.</creator><creatorcontrib>Ochoa-Estrella, F. J. ; Vera-Marquina, A. ; Mejia, I. ; Leal-Cruz, A. L. ; Quevedo-López, M.</creatorcontrib><description>In this work, ZnTe thin films were grown by pulsed laser deposition technique with the aim of study their structural and optical behaviors as function of deposition pressure and consider their potential application in optoelectronic devices. Hence, to obtain the stoichiometric ZnTe phase, the deposition temperature was considered as constant (286 °C) during growth process and deposition pressure was varied, as follow: 1, 20, 50, and 100 mTorr. After that, deposited films were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and UV–Vis spectroscopy techniques. Characterization results reveals that deposited films correspond to stoichiometric, nanostructured, uniform and monophasic deposits of ZnTe with a strong preferential orientation in the (111) plane. It is noteworthy that thickness, grain size and crystal size of the films do not show a linear dependence on the range of deposition pressure. On the other hand, UV–Vis spectroscopy results indicate that band gap values of ZnTe films can be tuned in the range of 2.43–2.56 eV as function of deposition pressure. Lastly, it is consider that ZnTe thin films deposited at 20 mTorr present the best match between structural and optical characteristics for potential applications in development of optoelectronic devices.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-018-8755-3</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electron microscopy ; Energy gap ; Materials Science ; Optical and Electronic Materials ; Optical properties ; Optoelectronic devices ; Pulsed laser deposition ; Spectroscopy ; Spectrum analysis ; Thin films ; Zinc tellurides</subject><ispartof>Journal of materials science. 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All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-29c79a6c1c98223e542070e2aa6cf25637b79155136f1488547267ab1ff137cc3</citedby><cites>FETCH-LOGICAL-c316t-29c79a6c1c98223e542070e2aa6cf25637b79155136f1488547267ab1ff137cc3</cites><orcidid>0000-0002-1267-0090</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-018-8755-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-018-8755-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Ochoa-Estrella, F. 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After that, deposited films were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and UV–Vis spectroscopy techniques. Characterization results reveals that deposited films correspond to stoichiometric, nanostructured, uniform and monophasic deposits of ZnTe with a strong preferential orientation in the (111) plane. It is noteworthy that thickness, grain size and crystal size of the films do not show a linear dependence on the range of deposition pressure. On the other hand, UV–Vis spectroscopy results indicate that band gap values of ZnTe films can be tuned in the range of 2.43–2.56 eV as function of deposition pressure. Lastly, it is consider that ZnTe thin films deposited at 20 mTorr present the best match between structural and optical characteristics for potential applications in development of optoelectronic devices.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electron microscopy</subject><subject>Energy gap</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Pulsed laser deposition</subject><subject>Spectroscopy</subject><subject>Spectrum analysis</subject><subject>Thin films</subject><subject>Zinc tellurides</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kE9LAzEQxYMoWKsfwFvAc3SSbDbZo9S_ULCHKuIlZGPSbtlma7Kr9NsbWcGTpxmG997wfgidU7ikAPIqUVCiIEAVUVIIwg_QhArJSaHY6yGaQCUkKQRjx-gkpQ0AlAVXE_SyiC6lITrcBN8OLliHu4BTHwfbD9G02IR33O36xua9dmvz2XQx4c7jt7B0uF83Afum3Sa8it1XwPUeL-Y3p-jImza5s985Rc93t8vZA5k_3T_OrufEclr2hFVWVqa01FaKMe5EwUCCYybfPBMll7WsqBCUl54WKjeUrJSmpt5TLq3lU3Qx5u5i9zG41OtNN8SQX2oGwIBLVUFW0VFlY5dSdF7vYrM1ca8p6B98esSnMz79g0_z7GGjJ2VtWLn4l_y_6RtVHXFa</recordid><startdate>20180501</startdate><enddate>20180501</enddate><creator>Ochoa-Estrella, F. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ochoa-Estrella, F. J.</au><au>Vera-Marquina, A.</au><au>Mejia, I.</au><au>Leal-Cruz, A. L.</au><au>Quevedo-López, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2018-05-01</date><risdate>2018</risdate><volume>29</volume><issue>9</issue><spage>7629</spage><epage>7636</epage><pages>7629-7636</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this work, ZnTe thin films were grown by pulsed laser deposition technique with the aim of study their structural and optical behaviors as function of deposition pressure and consider their potential application in optoelectronic devices. Hence, to obtain the stoichiometric ZnTe phase, the deposition temperature was considered as constant (286 °C) during growth process and deposition pressure was varied, as follow: 1, 20, 50, and 100 mTorr. After that, deposited films were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and UV–Vis spectroscopy techniques. Characterization results reveals that deposited films correspond to stoichiometric, nanostructured, uniform and monophasic deposits of ZnTe with a strong preferential orientation in the (111) plane. It is noteworthy that thickness, grain size and crystal size of the films do not show a linear dependence on the range of deposition pressure. On the other hand, UV–Vis spectroscopy results indicate that band gap values of ZnTe films can be tuned in the range of 2.43–2.56 eV as function of deposition pressure. Lastly, it is consider that ZnTe thin films deposited at 20 mTorr present the best match between structural and optical characteristics for potential applications in development of optoelectronic devices.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-018-8755-3</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-1267-0090</orcidid></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Electron microscopy Energy gap Materials Science Optical and Electronic Materials Optical properties Optoelectronic devices Pulsed laser deposition Spectroscopy Spectrum analysis Thin films Zinc tellurides |
| title | Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD |
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