Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics
Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-l,3,5-trime...
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description | Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-l,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery- powered flexible electronic systems. |
doi_str_mv | 10.1007/s12274-017-1449-y |
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Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-l,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. 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Sung-Yool</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics</atitle><jtitle>Nano research</jtitle><stitle>Nano Res</stitle><addtitle>Nano Research</addtitle><date>2017-07-01</date><risdate>2017</risdate><volume>10</volume><issue>7</issue><spage>2459</spage><epage>2470</epage><pages>2459-2470</pages><issn>1998-0124</issn><eissn>1998-0000</eissn><abstract>Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-l,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery- powered flexible electronic systems.</abstract><cop>Beijing</cop><pub>Tsinghua University Press</pub><doi>10.1007/s12274-017-1449-y</doi><tpages>12</tpages></addata></record> |
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subjects | Atomic/Molecular Structure and Spectra Batteries Biomedicine Biotechnology Chemistry and Materials Science Circuits Computation Computer memory Condensed Matter Physics Electronic systems Field programmable gate arrays Flexible components Gates Gates (circuits) Logic circuits Materials Science Memristors Nanotechnology Power consumption Product development Research Article Substrates 柔性基板 电子存储器 电子系统 电池供电 运行周期 逻辑电路 静态功耗 非易失性 |
title | Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics |
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