Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition

In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-02, Vol.52 (2), p.184-188
Hauptverfasser:	Lubyanskiy, Ya. V., Bondarev, A. D., Soshnikov, I. P., Bert, N. A., Zolotarev, V. V., Kirilenko, D. A., Kotlyar, K. P., Pikhtin, N. A., Tarasov, I. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum compounds Aluminum nitride Chemical synthesis Electronics industry Gallium arsenide Gallium nitrate Interfaces Lasers Magnetic Materials Magnetism Nitrides Nitrogen Nitrogen plasma Optical components Oxygen Physics Physics and Astronomy Plasma deposition Refractivity Semiconductor lasers Silicon Surfaces Thin Films
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